Insights into the Origins of Minority Carrier Traps in Solution-Processed Organic Semiconductors and Their Effects on Transistor Photostability,Advanced Electronic Materials

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Insights into the Origins of Minority Carrier Traps in Solution-Processed Organic Semiconductors and Their Effects on Transistor Photostability
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2022-07-07 , DOI: 10.1002/aelm.202200355
Xiaobin Ruan ₁ , Shuiling Cheng ₁ , Wei Deng _{1,

2} , Yuan Tan ₁ , Zhengjun Lu ₁ , Jialin Shi ₁ , Xiujuan Zhang ₁ , Jiansheng Jie ₁

Affiliation

Minority carrier traps in the bandgap of organic semiconductors (OSCs) are pervasive and of vital importance in determining the performance and stability of the optoelectronic device. Understanding their origins is one critical issue at both the fundamental and applied levels. However, relevant research has rarely been performed due to the lack of an effective strategy for quantitatively assessing the minority carrier traps buried in OSCs. Here, organic field-effect transistors (OFETs) operated under strong and long-term light illumination can be used as a model device to assess the amount of minority carrier traps in solution-processed OSCs, are proposed. Based on the experimental results and theoretical calculations, first identified hydrated impurities (water and oxygen) in the residual organic solvents primarily contribute to formation of minority carrier traps within the OSC bandgap, giving rise to photo-induced electrical instability of OFETs. To address this problem, a molecular additive strategy is developed to improve the OFET photostability by releasing trapped electrons from the levels of minority carrier traps. This work not only elucidates the significant role of water and oxygen in the residual organic solvents in forming minority carrier traps but also provides guidelines for improving OFET photostability for practical applications.

中文翻译：

深入了解溶液处理有机半导体中少数载流子陷阱的起源及其对晶体管光稳定性的影响

有机半导体 (OSC) 带隙中的少数载流子陷阱普遍存在，对于确定光电器件的性能和稳定性至关重要。了解它们的起源是基础和应用层面的一个关键问题。然而，由于缺乏定量评估掩埋在 OSC 中的少数载流子陷阱的有效策略，相关研究很少进行。在这里，提出了在强和长期光照下工作的有机场效应晶体管 (OFET) 作为模型器件来评估溶液处理的 OSC 中少数载流子陷阱的数量。根据实验结果和理论计算，首先确定了残留有机溶剂中的水合杂质（水和氧）主要有助于在 OSC 带隙内形成少数载流子陷阱，从而导致 OFET 的光致电不稳定性。为了解决这个问题，开发了一种分子添加剂策略，通过从少数载流子陷阱的能级释放被捕获的电子来提高 OFET 的光稳定性。这项工作不仅阐明了水和氧在残留有机溶剂中对形成少数载流子陷阱的重要作用，而且还为提高 OFET 光稳定性的实际应用提供了指导。开发了一种分子添加剂策略，通过从少数载流子陷阱的能级释放捕获的电子来提高 OFET 的光稳定性。这项工作不仅阐明了水和氧在残留有机溶剂中对形成少数载流子陷阱的重要作用，而且还为提高 OFET 光稳定性的实际应用提供了指导。开发了一种分子添加剂策略，通过从少数载流子陷阱的能级释放捕获的电子来提高 OFET 的光稳定性。这项工作不仅阐明了水和氧在残留有机溶剂中对形成少数载流子陷阱的重要作用，而且还为提高 OFET 光稳定性的实际应用提供了指导。

更新日期：2022-07-07

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