All-Electrical Programmable Domain-Wall Spin Logic-In-Memory Device,Advanced Electronic Materials

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All-Electrical Programmable Domain-Wall Spin Logic-In-Memory Device
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2022-07-07 , DOI: 10.1002/aelm.202200412
Weiyang Wang _{1,

2} , Yu Sheng ₁ , Yuanhui Zheng _{1,

3} , Yang Ji _{1,

2} , Kaiyou Wang _{1,

2,

3,

4}

Affiliation

Control of spins by spin–orbit torque brings novel strategies to design spintronic devices with potentially high impact in data storage and logic-in-memory computing architectures. Although various attempts have been proposed to avoid the participation of magnetic field during magnetization switching for realizing multifunctional spin logic devices, simpler and more feasible approaches are still strongly desired. Here, field-free current-induced magnetization switching is achieved through magnetic domain wall (DW) motion in a dual-channels device, where the chiral Néel DW is stabilized by the strong Dzyaloshinskii–Moriya interaction in Pt/Co/Ru asymmetric structure. By electrically programming the initial magnetization states of the device with two opposite switching modes, four Boolean logic gates of AND, NAND, OR, and NOR are demonstrated. This work demonstrates that ingenious geometry design can be important for developing the spin logic devices and in-memory computing architectures.

中文翻译：

全电可编程域壁自旋逻辑内存器件

通过自旋轨道扭矩控制自旋为设计自旋电子器件带来了新的策略，这些器件对数据存储和内存中的逻辑计算架构具有潜在的高影响。尽管已经提出了各种尝试来避免在磁化切换期间磁场的参与以实现多功能自旋逻辑器件，但仍然强烈需要更简单和更可行的方法。在这里，无场电流感应磁化切换是通过双通道器件中的磁畴壁 (DW) 运动实现的，其中手性 Néel DW 通过 Pt/Co/Ru 不对称结构中的强 Dzyaloshinskii-Moriya 相互作用稳定。通过用两种相反的开关模式对器件的初始磁化状态进行电编程，展示了 AND、NAND、OR 和 NOR 的四个布尔逻辑门。

更新日期：2022-07-07

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