Photoreduction of hexavalent uranium (U(VI)) by semiconductor provides a novel and effective avenue for uranium extraction. Unfortunately, the traditional metal oxide and sulfide semiconductors suffer from the lack of confinement sites to U(VI), which resulted in the long period (∼ 1 h) to achieve a high U(VI) extraction efficiency of > 90%. Herein, we successfully constructed WS₂ nanosheets and created in-situ oxidized domains on the surfaces (O-WS₂) to promote the uranium extraction and the corresponding removal kinetics. In this system, the O_7.7-WS₂ nanosheets exhibited a considerable U(VI) extraction efficiency of > 90% within 20 min in 8 mg·L⁻¹ U(VI)-containing solution, which represented the highly efficient U(VI) removal performance. In 200 mg·L⁻¹ U(VI)-containing solution, the O_7.7-WS₂ nanosheets exhibited an extraction capacity of 652.4 mg·g⁻¹. The mechanism study revealed that the oxidized surface tended to trap hydrogen atom and in-situ form hydroxyl groups in defect sites. Evidenced by a series of experiment, such as kinetic isotope effect, ¹H nuclear magnetic resonance (NMR) spectra, and X-ray absorption near-edge structure (XANES) spectra, the in-situ formed hydroxyl groups participated in the uranium reduction, which dramatically enhanced uranium extraction kinetics and efficiency.

通过半导体光还原六价铀 (U(VI)) 为铀提取提供了一种新颖而有效的途径。不幸的是，传统的金属氧化物和硫化物半导体缺乏对 U(VI) 的限制位点，这导致需要很长的时间（~1 小时）才能实现 > 90% 的高 U(VI) 提取效率。在此，我们成功地构建了 WS ₂纳米片并在表面上产生原位氧化域（O-WS ₂）以促进铀提取和相应的去除动力学。在该系统中，O _7.7 -WS _{2纳米片在 8 mg·L} ^-1的 20 分钟内表现出相当大的 U(VI) 提取效率 > 90%含 U(VI) 的溶液，代表了高效的 U(VI) 去除性能。在200 mg·L ^-1 U(VI)的溶液中，O _7.7 -WS ₂纳米片的萃取能力为652.4 mg·g ^-1。机理研究表明，氧化表面倾向于捕获氢原子并在缺陷位点原位形成羟基。^{动力学同位素效应、 1} H核磁共振（NMR）光谱、X射线吸收近边结构（XANES）光谱等一系列实验证明，原位形成的羟基参与了铀的还原，这极大地提高了铀提取动力学和效率。