Room temperature electric field controlled magnetism is extremely promising for the next-generation high-performance spintronic devices. Here, based on the ferroelectric switching driven oxygen ion migration in the Ta/Co/BiFeO₃/SrRuO₃ heterostructures, the magnetic moment, magnetic coercive field, exchange bias field, and junction resistance are reversibly manipulated by tuning the ferroelectric polarization of the BiFeO₃ layer. All these phenomena are consistently explained by the oxygen ion migration induced CoO_x/Co redox effect, which is evidenced by the synchrotron X-ray absorption spectroscopy measurements. Interestingly, owing to the controllable ferroelectric switching dynamics of the BiFeO₃ thin film, the magnetic coercive field of the Co thin film can be continuously and precisely tuned by controlling the ferroelectric polarization of the BiFeO₃ thin film, and the manipulating speed of the voltage control of magnetism can be fast to 100 ns. This nonvolatile, stable, reversible, fast, and reproducible voltage control of magnetism shows great potential for designing low-power and high-speed spintronics.

室温电场控制磁性对于下一代高性能自旋电子器件极具前景。在这里，基于 Ta/Co/ BiFeO _{3 /SrRuO 3}异质结构中的铁电开关驱动氧离子迁移，通过调节 BiFeO 的铁电极化可逆地控制磁矩、矫顽力场、交换偏置场和结电阻₃层。所有这些现象都可以用氧离子迁移引起的 CoO _x /Co 氧化还原效应来解释，同步加速器 X 射线吸收光谱测量证明了这一点。有趣的是，由于 BiFeO _{3的可控铁电开关动力学}薄膜，通过控制BiFeO ₃薄膜的铁电极化，可以连续精确地调节Co薄膜的矫顽磁场，磁性电压控制的操纵速度可以快到100 ns。这种非易失、稳定、可逆、快速和可重复的磁性电压控制显示出设计低功率和高速自旋电子学的巨大潜力。