In order to achieve low-temperature bonding and high-temperature service, Cu/Sn/Cu and Cu/Sn-0.6SiC/Cu structure were fabricated by transient liquid phase (TLP) bonding, and the microstructure evolution of intermetallic compound (IMC) and mechanical performance of TLP bonding solder joints were investigated. The results demonstrated that the scalloped Cu₆Sn₅ IMC and lamellar Cu₃Sn IMC formed at Sn/Cu interface gradually grew up in both solder joints as the bonding time increased. The asymmetrical growth of IMC was formed on both sides at TLP solder joints interface, whereas the interfacial IMC growth rate of Cu/Sn-0.6SiC/Cu was smaller than that of Cu/Sn/Cu solder. After TLP bonding for 120 min, Cu/Sn/Cu structure was composed of total Cu₆Sn₅ and Cu₃Sn IMC and Cu/Sn-0.6SiC/Cu structure still contained remaining Sn phase. SiC nanowires (SiC NWs) dispersed in the solder matrix could impede the growth path between Sn and Cu, so SiC NWs doped to Sn solder could slow down the IMC growth. Moreover, introducing SiC NWs could promote the shear strength of composite solder compared with Sn solder joints during TLP bonding.

为实现低温键合和高温服务，采用瞬态液相（TLP）键合制备Cu/Sn/Cu和Cu/Sn-0.6SiC/Cu结构，以及金属间化合物（IMC）的微观结构演变研究了 TLP 键合焊点的机械性能。结果表明，随着键合时间的增加，在Sn/Cu界面处形成的扇形Cu ₆ Sn ₅ IMC和层状Cu ₃ Sn IMC在两个焊点中逐渐长大。TLP焊点界面两侧IMC形成不对称生长，而Cu/Sn-0.6SiC/Cu界面IMC生长速率小于Cu/Sn/Cu焊料。TLP键合120 min后，Cu/Sn/Cu结构由总Cu _6组成Sn ₅和Cu ₃ Sn IMC 和Cu/Sn-0.6SiC/Cu 结构仍然含有剩余的Sn 相。分散在焊料基质中的 SiC 纳米线 (SiC NWs) 会阻碍 Sn 和 Cu 之间的生长路径，因此掺杂到 Sn 焊料中的 SiC NWs 会减缓 IMC 的生长。此外，在 TLP 键合过程中，与 Sn 焊点相比，引入 SiC NW 可以提高复合焊料的剪切强度。