Abstract

For the first time, a comparative study of the effect of electron and proton irradiation at a temperature of 20–500°C on the characteristics of semiconductor devices based on silicon carbide, i.e., commercial high-voltage 4H-SiC Schottky diodes, is carried out. The diodes are irradiated with 15-MeV protons and 0.9‑MeV electrons. It is found that the most sensitive parameter, which determines the radiation resistance of devices, is the base resistance, which monotonically increases with the radiation dose D. It is shown that, under low-temperature (“cold”) irradiation, the efficiency of compensation of a semiconductor by proton irradiation is about 400 times higher than the efficiency of electron irradiation. Under “hot” (high temperature) irradiation, the radiation resistance of diodes is several times higher than the resistance of diodes under “cold” irradiation. The rate of formation of deep centers in the upper half of the band gap of silicon carbide decreased with increasing irradiation temperature.

中文翻译：

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温度在高能带电粒子对碳化硅二极管辐射损伤中的作用

摘要

首次比较研究了20~500°C温度下电子和质子辐照对基于碳化硅的半导体器件即商用高压4 H -SiC肖特基二极管特性的影响。执行。用 15-MeV 质子和 0.9-MeV 电子照射二极管。发现决定器件辐射电阻的最敏感参数是基极电阻，它随着辐射剂量D单调增加. 结果表明，在低温（“冷”）辐照下，质子辐照补偿半导体的效率是电子辐照效率的约 400 倍。在“热”（高温）照射下，二极管的辐射电阻比二极管在“冷”照射下的电阻高几倍。碳化硅带隙上半部深中心的形成率随着辐照温度的升高而降低。