Abstract

The possibility of manufacturing semiconductor heterostructures based on III–V compounds for photovoltaic converters by diffusion methods is investigated. In a semiconductor wafer of the AB compound, a near-surface nanoscale layer of AB_1 – xC_x solid solution is formed due to the solid-phase substitution reactions of B atoms with C atoms supplied to the surface of the wafer in vapor form at 480–580°C for GaSb wafers and 670°C for GaAs wafers. The source of the C-element vapor were saturated solution melts based on Ga or In, or unsaturated Sn-based solution melts. The possibility of forming a p–n junction due to Zn diffusion into the n-type AB wafer simultaneously with the formation of an AB_1 – xC_x near-surface layer is investigated. The positive effect of GaSb_1 – xAs_x and GaSb_1 – xP_x near-surface layers on the luminescence characteristics of GaSb-based structures with simultaneous zinc diffusion is shown.

中文翻译：

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由于固相取代反应在 III-V 族二元化合物晶片中形成三重固溶体的近表面层

摘要

研究了通过扩散方法制造用于光伏转换器的基于 III-V 化合物的半导体异质结构的可能性。在AB化合物的半导体晶片中，由于B原子与以蒸气形式供应到晶片表面的C原子发生固相取代反应，形成了AB _{1 -  x} C _x固溶体的近表面纳米级层GaSb 晶圆在 480–580°C，GaAs 晶圆在 670°C。C元素蒸气的来源是基于Ga或In的饱和溶液熔体，或基于Sn的不饱和溶液熔体。_{在形成 AB 1  – x}的同时，由于 Zn 扩散到n型 AB 晶片中而形成p-n结的可能性研究了C _x近地表层。_{图中显示了 GaSb 1 –  x} As _x和 GaSb _{1 –  x} P _x近表面层对具有同时锌扩散的 GaSb 基结构的发光特性的积极影响。