Abstract

Low-power microwave irradiation on the surface of gallium arsenide leads to the quantitative changes of the ratio of the Ga and As atoms (ions), which depends on the frequency of the electromagnetic field. It is shown that a variation in the Ga/As ratio results from the resonance relaxation processes caused by the drift of excess carriers and their lifetime, while the motion of charged particles takes place along an oscillating substrate and is determined by both drift and diffusion in the presence of the field of frequency-dependent electromechanical stresses. It is found that the effect leads to the changes of both composition and concentration and type of free carriers, which, in turn, causes changes in the rheological and electrical parameters of the surface, including variations in the direction and speed of charged particles accompanied by electronic and acoustic emission.

中文翻译：

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毫米波电磁波对砷化镓近地表层结构和相组成的影响

摘要

砷化镓表面的低功率微波辐射导致Ga和As原子（离子）的比例发生数量变化，这取决于电磁场的频率。结果表明，Ga/As 比的变化是由过量载流子的漂移及其寿命引起的共振弛豫过程引起的，而带电粒子的运动发生在振荡的衬底上，由漂移和扩散共同决定。频率相关的机电应力场的存在。发现该效应导致自由载流子的组成、浓度和类型的变化，进而导致表面流变学和电学参数的变化，