The CeF₃ doped Gd_2-xMoB₂O₉ phosphors (where x = 0.00, 0.25, 0.50 and 0.75 mol%) were synthesized by the conventional high-temperature solid-state reaction method at 900 °C for 12 h in air. DSC and TGA analysis executed to study the optimum temperature for sintering. The structural, photoluminescence and X-ray luminescence properties were investigated. The structure of the samples was analyzed by using X-ray diffractometer (XRD). The absorption spectra were analyzed and found that absorption edge increased with the increasing concentration of CeF₃. The photoluminescence of phosphors shows the overlapping of excitation and emission peaks in the range of 300 nm–450 nm. These emission peak correspond to the 5d – 4f transitions of Ce³⁺ ion. The optimum concentration of CeF₃ in these phosphors is 0.50 mol% corresponding to maximum emission intensity. The X-ray induced optical luminescence spectra showed a strong emission peak at 411 nm the concentration quenching at 0.75 mol%, which is as efficient as 54.4% compared with bismuth germanium oxide (BGO) crystal. The luminescence decay increased with the increment of CeF₃ concentration. From the optical properties investigated, it was found that the phosphors performed a strong and fast luminescence signal which is appropriate for the development of scintillators in X-ray detector devices.

CeF ₃掺杂的Gd _2-x MoB ₂ O ₉荧光粉（其中x = 0.00, 0.25, 0.50和0.75 mol％）通过常规高温固态反应方法在900℃下在空气中合成12小时。进行 DSC 和 TGA 分析以研究烧结的最佳温度。研究了结构、光致发光和X射线发光特性。使用X射线衍射仪（XRD）分析样品的结构。对吸收光谱进行分析发现，随着CeF _{3浓度的增加，吸收边增加。}. 荧光粉的光致发光显示激发和发射峰在 300 nm-450 nm 范围内的重叠。这些发射峰对应于 Ce ³⁺离子的 5d – 4f 跃迁。_{这些荧光粉中CeF 3}的最佳浓度为0.50 mol%，对应于最大发射强度。X 射线诱导的发光光谱在 411 nm 处显示出强烈的发射峰，浓度猝灭为 0.75 mol%，与铋锗氧化物 (BGO) 晶体相比，效率高达 54.4%。发光衰减随着CeF _{3的增加而增加}专注。根据所研究的光学特性，发现磷光体发出强烈且快速的发光信号，这适用于 X 射线探测器设备中闪烁体的开发。