High phase transition temperature and low utilization rate of sunlight of vanadium dioxide (VO₂) have been an important obstacle to expand its application in smart semiconductor materials. In this paper, we propose a novel method by the double-glow plasma pre-sputtering to induce to generate a lot of surface vacancy defects/residual stresses, which can promote the high-quality growth of VO₂ thin films on quartz substrates. The results showed that the plasma pretreatment and annealing temperature affected the stability of phase structure to cause the formation of surface residual stresses of VO₂films. The optical-electrical properties of the treated VO₂ film indicated that the incident light at 2.5 μm has a great transmittance contrast of 63.25% and the solar transmittance modulation efficiency (ΔT_sol) of 14.9 %before and after the phase transition. It is found that the metal–insulator phase transition temperature of VO₂ after plasma treatment is 39.7℃, which is 20.4℃ lower than that of conventional VO₂ film, greatly increases its application in intelligent windows and photoelectric fields. Our research provides an effective and low-cost approach to prepared high-quality VO₂ thin films with low phase transition temperature and large-phase-transition amplitude on quartz substrate.

_{二氧化钒（VO 2} ）的高相变温度和低太阳光利用率一直是其在智能半导体材料中扩大应用的重要障碍。_{在本文中，我们提出了一种通过双辉等离子体预溅射诱导产生大量表面空位缺陷/残余应力的新方法，可以促进VO 2}薄膜在石英衬底上的高质量生长。结果 表明，等离子体预处理和退火温度影响相结构的稳定性， 导致VO ₂薄膜表面残余应力的形成。_{处理后的VO 2}的光电特性薄膜表明，2.5 μm 处的入射光在相变前后具有 63.25% 的透射率对比度和 14.9%的太阳透射率调制效率（ΔT _{sol ）。}发现等离子处理后VO ₂的金属-绝缘体相变温度为39.7℃，比常规VO ₂薄膜降低20.4℃，大大增加了其在智能窗户和光电领域的应用。_{我们的研究为在石英衬底上制备具有低相变温度和大相变幅度的高质量VO 2}薄膜提供了一种有效且低成本的方法。