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Molecular Doping Enabling Mobility Boosting of 2D Sn2+-Based Perovskites
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2022-06-24 , DOI: 10.1002/adfm.202204870 Youjin Reo 1 , Huihui Zhu 1 , Ao Liu 1 , Yong‐Young Noh 1
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2022-06-24 , DOI: 10.1002/adfm.202204870 Youjin Reo 1 , Huihui Zhu 1 , Ao Liu 1 , Yong‐Young Noh 1
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2D metal halide perovskites are attracting great interest for their diverse applications owing to their intrinsic superior stability compared to their 3D counterparts; however, their device performance is limited by insufficient charge transport because of the insulating bulky organic ligands. Electrical doping is a direct and efficient method for improving the electrical properties of emerging semiconductors; however, its feasibility and mechanism remain elusive in metal halide perovskites. To clarify this issue, in this study, diverse organic/inorganic molecules are deposited on a typical phenylethyl ammonium tin iodide ((PEA)2SnI4) perovskite by constructing a heterojunction. In addition, the variations in the electrical performance of the perovskite semiconductor are monitored. The low work function of the dopant molecules enables the spontaneous electron transfer from the perovskite, resulting in the p-doping effect on the perovskite host, which is verified by a series of characterization methods. The efficient charge transfer without deterioration of the perovskite microstructure improves the Hall mobility up to 100 cm2 V−1 s−1. Therefore, this work demonstrates the high doping efficiency of halide perovskites using a simple molecular charge transfer approach and provides a new opportunity for employing 2D perovskites in high-efficiency optoelectronic devices.
中文翻译：
分子掺杂促进二维 Sn2+ 基钙钛矿的迁移率
与 3D 对应物相比，2D 金属卤化物钙钛矿因其固有的优越稳定性而因其多种应用而引起了极大的兴趣；然而，由于绝缘庞大的有机配体，它们的器件性能受到电荷传输不足的限制。电掺杂是提高新兴半导体电性能的直接有效方法；然而，它的可行性和机理在金属卤化物钙钛矿中仍然难以捉摸。为了澄清这个问题，在这项研究中，不同的有机/无机分子沉积在典型的苯乙基碘化锡铵 ((PEA) 2 SnI 4) 钙钛矿通过构建异质结。此外，还监测了钙钛矿半导体的电性能变化。掺杂剂分子的低功函数使钙钛矿的电子自发转移，从而导致钙钛矿主体上的p掺杂效应，这一点已通过一系列表征方法得到验证。有效的电荷转移而不破坏钙钛矿微结构，将霍尔迁移率提高到 100 cm 2 V -1 s -1. 因此，这项工作通过简单的分子电荷转移方法证明了卤化物钙钛矿的高掺杂效率，并为在高效光电器件中使用二维钙钛矿提供了新的机会。
更新日期：2022-06-24
中文翻译：
分子掺杂促进二维 Sn2+ 基钙钛矿的迁移率
与 3D 对应物相比，2D 金属卤化物钙钛矿因其固有的优越稳定性而因其多种应用而引起了极大的兴趣；然而，由于绝缘庞大的有机配体，它们的器件性能受到电荷传输不足的限制。电掺杂是提高新兴半导体电性能的直接有效方法；然而，它的可行性和机理在金属卤化物钙钛矿中仍然难以捉摸。为了澄清这个问题，在这项研究中，不同的有机/无机分子沉积在典型的苯乙基碘化锡铵 ((PEA) 2 SnI 4) 钙钛矿通过构建异质结。此外，还监测了钙钛矿半导体的电性能变化。掺杂剂分子的低功函数使钙钛矿的电子自发转移，从而导致钙钛矿主体上的p掺杂效应，这一点已通过一系列表征方法得到验证。有效的电荷转移而不破坏钙钛矿微结构，将霍尔迁移率提高到 100 cm 2 V -1 s -1. 因此，这项工作通过简单的分子电荷转移方法证明了卤化物钙钛矿的高掺杂效率，并为在高效光电器件中使用二维钙钛矿提供了新的机会。
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