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Synthesis of 2D α-GeTe Single Crystals and α-GeTe/WSe2 Heterostructures with Enhanced Electronic Performance
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2022-06-23 , DOI: 10.1002/adfm.202201673 Wei Li 1 , Ruixia Wu 1 , Qiuqiu Li 1 , Quanyang Tao 1, 2 , Muhammad Zeeshan Saeed 1 , Xin Li 1 , Si Wan 1 , Rong Song 1 , Dingyi Shen 1 , Kejing Huang 1 , Miaomiao Liu 1 , Bailing Li 1 , Bei Zhao 1 , Jialing Liu 1 , Yuan Liu 1, 2 , Bo Li 1, 2 , Jia Li 1 , Xidong Duan 1
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2022-06-23 , DOI: 10.1002/adfm.202201673 Wei Li 1 , Ruixia Wu 1 , Qiuqiu Li 1 , Quanyang Tao 1, 2 , Muhammad Zeeshan Saeed 1 , Xin Li 1 , Si Wan 1 , Rong Song 1 , Dingyi Shen 1 , Kejing Huang 1 , Miaomiao Liu 1 , Bailing Li 1 , Bei Zhao 1 , Jialing Liu 1 , Yuan Liu 1, 2 , Bo Li 1, 2 , Jia Li 1 , Xidong Duan 1
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Two-dimensional (2D) materials have attracted extensive attention due to their important prospects in electronics and optoelectronics. Synthesizing new 2D materials, characterizing their properties, and developing their applications are still important topics. Herein, the synthesis of α-GeTe nanoplates on different substrates via the chemical vapor deposition process and the systematical investigation of their structure and electrical properties, is reported. By controlling the synthesis temperature and carrier gas, α-GeTe nanoplates, with a lateral dimension up to 30 µm and a thickness down to 1.2 nm, which corresponds to the thickness of one unit cell, can be obtained on 2D WSe2 substrate. Electrical transport studies show 2D α-GeTe nanoplates have an excellent conductivity (9.33 × 105 S m−1) and an extraordinary breakdown current density (6.1× 107 A cm−2). Compared with traditional WSe2 transistors with deposited metal electrodes, the WSe2 transistors with the metallic α-GeTe nanoplates as van der Waals metal electrodes achieved much better performance, such as higher on-state current (from 7.83 to 23.23 µA µm−1) and electron mobility (from 16.5 to 75.0 cm2 V1 S1). This study demonstrates an effective pathway to achieve ultrathin 2D materials and provides an accessible strategy to improve the performance of 2D electronic devices.
中文翻译：
具有增强电子性能的二维 α-GeTe 单晶和 α-GeTe/WSe2 异质结构的合成
二维（2D）材料由于其在电子学和光电子学中的重要前景而引起了广泛的关注。合成新的二维材料、表征它们的特性以及开发它们的应用仍然是重要的课题。本文报道了通过化学气相沉积工艺在不同基底上合成 α-GeTe 纳米板及其结构和电学性质的系统研究。通过控制合成温度和载气，可以在二维WSe 2衬底上获得横向尺寸高达30 µm、厚度低至1.2 nm（相当于一个晶胞厚度）的α-GeTe纳米片。电输运研究表明 2D α-GeTe 纳米板具有优异的导电性 (9.33 × 10 5S m -1）和非凡的击穿电流密度（6.1×10 7 A cm -2）。与具有沉积金属电极的传统WSe 2晶体管相比，具有金属α-GeTe纳米板作为范德华金属电极的WSe 2 晶体管实现了更好的性能，例如更高的通态电流（从7.83到23.23 µA µm -1）和电子迁移率（从 16.5 到 75.0 cm 2 V 1 S 1）。本研究展示了一种实现超薄二维材料的有效途径，并提供了一种提高二维电子设备性能的可行策略。
更新日期：2022-06-23
中文翻译：
具有增强电子性能的二维 α-GeTe 单晶和 α-GeTe/WSe2 异质结构的合成
二维（2D）材料由于其在电子学和光电子学中的重要前景而引起了广泛的关注。合成新的二维材料、表征它们的特性以及开发它们的应用仍然是重要的课题。本文报道了通过化学气相沉积工艺在不同基底上合成 α-GeTe 纳米板及其结构和电学性质的系统研究。通过控制合成温度和载气，可以在二维WSe 2衬底上获得横向尺寸高达30 µm、厚度低至1.2 nm（相当于一个晶胞厚度）的α-GeTe纳米片。电输运研究表明 2D α-GeTe 纳米板具有优异的导电性 (9.33 × 10 5S m -1）和非凡的击穿电流密度（6.1×10 7 A cm -2）。与具有沉积金属电极的传统WSe 2晶体管相比，具有金属α-GeTe纳米板作为范德华金属电极的WSe 2 晶体管实现了更好的性能，例如更高的通态电流（从7.83到23.23 µA µm -1）和电子迁移率（从 16.5 到 75.0 cm 2 V 1 S 1）。本研究展示了一种实现超薄二维材料的有效途径，并提供了一种提高二维电子设备性能的可行策略。
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