InSb has superior electronic transport with low bandgap and high mobility of charge carriers, however, its high lattice thermal conductivity makes it less applicable for thermoelectric applications. Herein we report an effective approach to simultaneously enhance the power factor and reduce total thermal conductivity by isoelectronic doping of Bi for Sb. A series of polycrystalline InSb_1-x Bi_x is prepared. The enhanced power factor is attributed to the increase of carrier concentration by charge transfer from the Bi d-orbital states to the In 4d-orbital states based on analyses of both the Bi and In L₃-edge XANES spectra of InSb_1-xBi_x. The reduced total thermal conductivity arises from the reduced lattice thermal conductivity due to the point defect. The strain field fluctuations are evidenced by the blue shift in Raman spectra of InSb_1-x Bi_x. As a result, zT = 0.56 is attained at 700 K, which is 16% higher than the pristine InSb.

InSb 具有优异的电子传输，具有低带隙和电荷载流子的高迁移率，但其高晶格热导率使其不太适用于热电应用。在这里，我们报告了一种有效的方法，通过对 Sb 等电子掺杂 Bi，同时提高功率因数并降低总热导率。制备了一系列多晶InSb _{1- x} Bi _x。基于对 InSb 的Bi和In L ₃边缘 XANES 光谱的分析，增强的功率因数归因于通过电荷从Bi d轨道状态转移到In 4 d轨道状态而增加了载流子浓度_1-x比_x。降低的总热导率源于点缺陷导致的降低的晶格热导率。_{InSb 1- x} Bi _x的拉曼光谱蓝移证明了应变场波动。因此，zT = 0.56 在 700  K 时达到，比原始 InSb 高 16%。