The rapid growth of information technology and data processing in recent times has immensely increased the research surge for the efficient data storage devices. The state of the art resistive memory technology is keen to deliver in high density storage along with fast programming. In this work, we have fabricated a resistive memory device using 2D perovskite-polymer nanocomposite as the functional layer, where aluminum (Al) and indium tin oxide (ITO) has been employed as top and bottom electrodes respectively. The polymer nanocomposite device with moderate level of perovskite nanosheets concentration demonstrated significant resistive switching properties having maximum current ON/OFF ratio of 10⁴ with switching voltages of± 1.5 V. Moreover, the endurance upto 10³ cycles and the data retention upto 10⁴ s without any severe degradation show the uniformity and reproducibility of the resistive memory device. The Al/PMMA/CsPb₂Br₅/PMMA/ITO device has also exhibited multi-level storage capability programmed under controlled compliance current (CC), which assures the high-density storage. In addition, the proposed device has also demonstrated long-term stability even after 15 days of fabrication process and no deprivation in the resistance state could be observed. Finally, the charge transport mechanism is illustrated on the basis of bipolar switching curves with the help of energy band diagram and the role CsPb₂Br₅ perovskite has been discussed as the charge trapping/de-trapping centers.

近年来信息技术和数据处理的快速发展极大地增加了对高效数据存储设备的研究热潮。最先进的电阻式存储器技术热衷于提供高密度存储以及快速编程。在这项工作中，我们使用 2D 钙钛矿聚合物纳米复合材料作为功能层制造了一种电阻存储器件，其中铝 (Al) 和氧化铟锡 (ITO) 分别用作顶部和底部电极。具有中等水平钙钛矿纳米片浓度的聚合物纳米复合器件表现出显着的电阻开关特性，最大电流开/关比为 10 ⁴，开关电压为± 1.5 V。此外，耐久性高达 10 ^{3循环和高达 10 4} s的数据保留没有任何严重的退化表明电阻存储器件的均匀性和再现性。Al/PMMA/CsPb ₂ Br ₅ /PMMA/ITO 器件还展示了在可控顺从电流 (CC) 下编程的多级存储能力，从而确保了高密度存储。此外，即使经过 15 天的制造过程，所提出的器件也表现出长期稳定性，并且在电阻状态下没有观察到剥夺。最后，借助能带图和CsPb ₂ Br _{5的作用，基于双极开关曲线说明了电荷传输机制。}钙钛矿已被讨论为电荷俘获/去俘获中心。