To improve the textured structure uniformity of monocrystalline silicon solar cells, an electrochemical anodic oxidation pretreatment technology was implemented to the silicon surface before the alkali texturing process. The effects of pretreatment on the textured structure were investigated at different oxidation conditions (voltage and duration) in three typical aqueous electrolytes with different pH values. The structure and thickness of the silicon oxide layer on the silicon wafer surface were analyzed by X-ray photoelectron spectroscopy. It was found that the uniform oxide layer of 1.5∼2 nm formed on the Si surface can promote the uniform growth of pyramidal nuclei in the initial texturing stage, while the excessive thicker oxide layer will reduce their density and uniformity. The average pyramid sizes were 1.4 ± 0.7 μm and 1.6 ± 1.7 μm with and without electrochemical oxidation pretreatment, respectively. The distribution of pyramid size became more uniform because the fraction of extremely large pyramids was greatly reduced. Compared with the traditional texturing process, the average reflectivity of the textured surface decreased from 13.1 % to 10.4 %. This technique is expected to be a suitable substitute for the H₂O₂ pre-cleaning process in the Si texturization for the industrial production of solar cells.

为提高单晶硅太阳能电池的织构结构均匀性，在碱织构工艺前对硅表面实施电化学阳极氧化预处理技术。在具有不同 pH 值的三种典型水性电解质中，研究了在不同氧化条件（电压和持续时间）下预处理对织构结构的影响。采用X射线光电子能谱分析硅片表面氧化硅层的结构和厚度。研究发现，Si表面形成的1.5~2 nm的均匀氧化层可以促进锥核在织构初始阶段的均匀生长，而过厚的氧化层会降低其密度和均匀性。金字塔的平均尺寸为 1.4 ± 0.7 μm 和 1.6 ± 1。分别为 7 μm，有和没有电化学氧化预处理。由于特大金字塔的比例大大减少，金字塔尺寸的分布变得更加均匀。与传统织构工艺相比，织构表面的平均反射率从13.1%下降到10.4%。该技术有望成为 H 的合适替代品_{用于太阳能电池工业化生产的硅质构化中的2} O ₂预清洗工艺。