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AAg3Ga8Se14 (A = Rb, Cs): second-harmonic generation responses realized through the parallel arrangement of AgSe4 and GaSe4 tetrahedrons
Dalton Transactions ( IF 3.5 ) Pub Date : 2022-06-23 , DOI: 10.1039/d2dt01614a Zhi-Xin Qiu 1, 2 , Shao-Min Pei 1 , Wen-Fa Chen 1 , Xiao-Ming Jiang 1 , Bin-Wen Liu 1 , Guo-Cong Guo 1
Dalton Transactions ( IF 3.5 ) Pub Date : 2022-06-23 , DOI: 10.1039/d2dt01614a Zhi-Xin Qiu 1, 2 , Shao-Min Pei 1 , Wen-Fa Chen 1 , Xiao-Ming Jiang 1 , Bin-Wen Liu 1 , Guo-Cong Guo 1
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Two new quaternary selenides AAg3Ga8Se14, (A = Rb, 1; Cs, 2) were synthesised via solid-state reaction in sealed silica tubes. Compounds 1 and 2 crystallised in the monoclinic space group Cm (no. 8) and their three-dimensional [Ag3Ga8Se14]− anionic frameworks were comprised of AgSe4 and GaSe4 tetrahedrons. Their UV-Vis-near infrared diffuse reflectance spectra showed that 1 and 2 possessed wide band gaps of 2.17 and 2.10 eV, respectively. Notably, under incident laser irradiation at 1910 nm, compounds 1 and 2 presented moderate second-harmonic generation responses of 0.6 and 0.7 × AgGaS2, respectively, with phase-matching behaviours due to the parallel arrangement of nonlinear optical (NLO) functional tetrahedral AgSe4 and GaSe4 units. The laser-induced damage thresholds of 1 and 2 were estimated to be 25.4 and 18.0 MW cm−2, respectively, which were 2.1 and 1.5 times the threshold of AgGaS2. This study revealed that the title selenides, which were constructed from tetrahedral units arranged in a parallel array, are promising infrared NLO materials.
中文翻译：
AAg3Ga8Se14 (A = Rb, Cs)：通过 AgSe4 和 GaSe4 四面体的平行排列实现的二次谐波产生响应
两种新的季硒化物 AAg 3 Ga 8 Se 14 (A = Rb, 1 ; Cs, 2 )在密封的二氧化硅管中通过固态反应合成。化合物1和2在单斜晶系空间群Cm（8号）中结晶，它们的三维[Ag 3 Ga 8 Se 14 ] -阴离子骨架由AgSe 4和GaSe 4四面体组成。他们的紫外-可见-近红外漫反射光谱表明，1和2分别具有2.17和2.10 eV的宽带隙。值得注意的是，在 1910 nm 入射激光照射下，化合物1和2 分别呈现出 0.6 和 0.7 × AgGaS 2的中等二次谐波产生响应，由于非线性光学 (NLO) 功能四面体 AgSe 的平行排列而具有相位匹配行为4和GaSe 4单元。1和2的激光诱导损伤阈值估计分别为25.4和18.0 MW cm -2，分别是AgGaS 2阈值的2.1和1.5倍. 这项研究表明，由平行排列的四面体单元构成的标题硒化物是有前途的红外非线性光学材料。
更新日期：2022-06-23
中文翻译：
AAg3Ga8Se14 (A = Rb, Cs)：通过 AgSe4 和 GaSe4 四面体的平行排列实现的二次谐波产生响应
两种新的季硒化物 AAg 3 Ga 8 Se 14 (A = Rb, 1 ; Cs, 2 )在密封的二氧化硅管中通过固态反应合成。化合物1和2在单斜晶系空间群Cm（8号）中结晶，它们的三维[Ag 3 Ga 8 Se 14 ] -阴离子骨架由AgSe 4和GaSe 4四面体组成。他们的紫外-可见-近红外漫反射光谱表明，1和2分别具有2.17和2.10 eV的宽带隙。值得注意的是，在 1910 nm 入射激光照射下，化合物1和2 分别呈现出 0.6 和 0.7 × AgGaS 2的中等二次谐波产生响应，由于非线性光学 (NLO) 功能四面体 AgSe 的平行排列而具有相位匹配行为4和GaSe 4单元。1和2的激光诱导损伤阈值估计分别为25.4和18.0 MW cm -2，分别是AgGaS 2阈值的2.1和1.5倍. 这项研究表明，由平行排列的四面体单元构成的标题硒化物是有前途的红外非线性光学材料。
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