Figure 2c: The frequency denoted in the figure should be multiplied by (2π)⁻¹. Figure 3: The x-axis should be shifted by a factor (2π)⁻¹. Paragraph 3.5: The reported bulk capacitance value of C_bulk = 3 μF should be changed to C_bulk = 0.48 μF (shift of (2π)⁻¹). The corrected C_bulk value is still in accordance with the range given in the references from the original article. (1,2) Figure A. Comparison of the fourth-order model (line) with the reduced (a) first-order and (b) second-order model (circles) in the frequency range [1 × 10^–5, 3 × 10⁴] Hz at 1.65 V. We thank Bart van den Boorn and Varun Anirudhan, DIFFER, for their help with writing this correction together with us. This article references 2 other publications. This article has not yet been cited by other publications. Figure A. Comparison of the fourth-order model (line) with the reduced (a) first-order and (b) second-order model (circles) in the frequency range [1 × 10^–5, 3 × 10⁴] Hz at 1.65 V. This article references 2 other publications.

中文翻译：

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更正“直接从电化学反应机制模拟的阻抗谱和表面覆盖：非线性状态空间方法”

图 2c：图中表示的频率应乘以 (2π) ^-1。图 3：x轴应移动 (2π) ^-1倍。第 3.5 段：报告的C _bulk = 3 μF 的体电容值应更改为C _bulk = 0.48 μF（(2π) ^-1的偏移）。修正后的C_体积值仍符合原始文章参考文献中给出的范围。(1,2) 图 A. 四阶模型（线）与简化的 (a) 一阶和 (b) 二阶模型（圆）在频率范围 [1 × 10 ^–5 , 3 × 10 ⁴] Hz 为 1.65 V。我们感谢 Bart van den Boorn 和 Varun Anirudhan, DIFFER，感谢他们帮助我们与我们一起编写此更正。本文引用了其他 2 篇出版物。这篇文章尚未被其他出版物引用。^{图 A. 频率范围 [1 × 10 –5} , 3 × 10 ⁴ ] Hz内的四阶模型（线）与简化的 (a) 一阶和 (b) 二阶模型（圆）的比较在 1.65 V。这篇文章引用了 2 个其他出版物。