A study was conducted on how the cooling rate after the phase change heat treatment required to secure the ferroelectric (FE) properties affects the ferroelectricity of Al-doped HfO₂ (Al:HfO₂) thin films. When cooling the thin film to room temperature after heat treatment, the cooling rate was controlled through slow chamber cooling, which maintains and cools the sample inside the heat treatment equipment, slightly faster air cooling, and rapid cooling using deionized water. We achieved the dramatic increase of remnant polarization (P_r) and coercive electric field (E_c) using rapid quenching after phase change heat treatment. The 2P_r and 2E_c values of rapid quenched FE Al:HfO₂ thin film are approximately ∼100 μC/cm² and ∼9.5 MV/cm, respectively, which are the highest records among HfO₂-based FE thin films reported so far. These significant improvements are attributed to inducing homogeneously distributed defects complexes and higher stress/confinement strain within Al:HfO₂ thin film, leading to preventing pinched hysteresis loop and stabilize orthorhombic crystal structure. Furthermore, endurance up to 2 × 10⁶ cycles and reasonable projected 10 years retention properties were achieved, stably without wake-up and fatigue in quenched FE Al:HfO₂ capacitor. These results propose a beneficial method to improve the ferroelectricity of HfO₂-based thin films.

研究了确保铁电（FE）特性所需的相变热处理后的冷却速率如何影响掺杂铝的HfO ₂（Al:HfO ₂）薄膜的铁电性。在热处理后将薄膜冷却至室温时，通过缓慢的腔室冷却来控制冷却速度，以保持和冷却热处理设备内的样品，稍快的空气冷却和使用去离子水的快速冷却。我们在相变热处理后使用快速淬火实现了剩余极化 (P _r ) 和矫顽电场 (E _{c ) 的显着增加。}快速淬火 FE Al:HfO的 2P _r和 2E _c值₂薄膜分别约为~100 μC/cm ²和~9.5 MV/cm，这是迄今为止报道的基于HfO ₂的FE薄膜中的最高记录。这些显着改进归因于在 Al:HfO ₂薄膜内诱导均匀分布的缺陷复合物和更高的应力/约束应变，从而防止收缩磁滞回线并稳定正交晶体结构。_{此外，在淬火的 FE Al:HfO 2}电容器中，实现了高达 2 × 10 ⁶循环的耐久性和合理的预计 10 年保持性能，稳定地没有唤醒和疲劳。这些结果提出了一种有益的方法来提高 HfO _{2的铁电性}基薄膜。