Atomic and Electronic Manipulation of Robust Ferroelectric Polymorphs,Advanced Materials

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Atomic and Electronic Manipulation of Robust Ferroelectric Polymorphs
Advanced Materials ( IF 27.4 ) Pub Date : 2022-06-22 , DOI: 10.1002/adma.202202633
Yonas Assefa Eshete ₁ , Kyungrok Kang ₁ , Seunghun Kang ₂ , Yejin Kim ₃ , Phuong Lien Nguyen ₄ , Deok-Yong Cho ₃ , Yunseok Kim ₂ , Jaekwang Lee ₄ , Suyeon Cho ₅ , Heejun Yang ₆

Affiliation

Polymorphism allows the symmetry of the lattice and spatial charge distributions of atomically thin materials to be designed. While various polymorphs for superconducting, magnetic, and topological states have been extensively studied, polymorphic control is a challenge for robust ferroelectricity in atomically thin geometries. Here, the atomic and electric manipulation of ferroelectric polymorphs in Mo₁₋_xW_xTe₂ is reported. Atomic manipulation for polymorphic control via chemical pressure (substituting tungsten for molybdenum atoms) and charge density modulation can realize tunable polar lattice structures and robust ferroelectricity up to T = 400 K with a constant coercive field in an atomically thin material. Owing to the effective inversion symmetry breaking, the ferroelectric switching withstands a charge carrier density of up to 1.1 × 10¹³ cm⁻², developing an original diagram for ferroelectric switching in atomically thin materials.

中文翻译：

坚固铁电多晶型物的原子和电子操纵

多态性允许设计原子薄材料的晶格和空间电荷分布的对称性。虽然已经广泛研究了超导、磁和拓扑状态的各种多晶型，但多晶型控制是原子薄几何形状中稳健铁电的挑战。_{在这里，报告了 Mo 1-}_x W _x Te ₂中铁电多晶型物的原子和电操纵。通过化学压力（用钨代替钼原子）和电荷密度调制进行多晶型控制的原子操作可以实现可调的极性晶格结构和高达T的稳健铁电性 = 400 K，在原子薄的材料中具有恒定的矫顽场。由于有效的反转对称性破缺，铁电开关可承受高达 1.1 × 10 ¹³ cm ^-2的电荷载流子密度，开发了原子薄材料中铁电开关的原始图。

更新日期：2022-06-22

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