It is a challenging task to fabricate thermally stable Photodetectors (PDs) working in the visible light spectrum range due to the degradation in photoresponse characteristics. Herein, excellent performance parameters with photoresponsivity reached up to as high as 50 AW^-1, and ultrahigh specific detectivity in excess of 2.3×10¹² Jones have been obtained simultaneously in a single photodetector based on vertical MoS₂ (v-MoS₂) at a high temperature of 200°C. The TiO₂ induction layer is ascribed as the main factor in enhancing the PDs performances by reducing lattice mismatch between v-MoS₂ and substrate, separating photogenerated electron-hole pairs (EHPs), and the formation of the vertical MoS₂ nanostructures. Besides, the optoelectronics performances of the v-MoS₂/TiO₂ heterostructures based field-effect transistor (FET) have also been examined under various operating temperatures, and the mechanism of how gate voltages affect the PDs performances has also been studied. In a word, the present fabricated v-MoS₂/TiO₂ heterostructures based FET PDs will find practical applications in a high-temperature environment.

由于光响应特性的退化，制造在可见光谱范围内工作的热稳定光电探测器（PD）是一项具有挑战性的任务。在此，在基于垂直MoS ₂ (v-MoS ₂ )的单个光电探测器中，同时获得了高达50 AW ^-1的优异性能参数和超过2.3×10 ¹² Jones 的超高比探测率。 200°C的高温。TiO ₂感应层被认为是通过减少 v-MoS _{2之间的晶格失配来提高 PD 性能的主要因素}和衬底，分离光生电子-空穴对（EHP），并形成垂直的MoS ₂纳米结构。此外，还研究了基于 v-MoS ₂ /TiO ₂异质结构的场效应晶体管（FET）在各种工作温度下的光电性能，并研究了栅极电压如何影响 PD 性能的机制。总之，目前制造的基于v-MoS ₂ /TiO ₂异质结构的FET PD将在高温环境中找到实际应用。