Conventional techniques for fabricating micro-light-emitting diode (LED) pixel arrays for ultra-high definition (UHD) displays have drawbacks of high cost and complex processing. Furthermore, it is technically difficult to improve the display resolution using traditional patterning and deposition processes. As the size of the chips decreases to the microscale, there is an increase in the cost due to the additional transfer process, and inaccuracy of mechanical positioning during the repeated transfer process. To solve these problems, a micro-patterning method using capillary force lithography was introduced. Using this method, a 10 µm-scale CsPbBr_xI_3-x micro-pattern array was fabricated. Moreover, multi-ligand (NMABr_0.7I_0.3–DMPDAB–PDAB) and poly(ethylene oxide) (PEO) as a hydrophilic polymer were added to the perovskite precursors to control the heterogeneous nucleation and crystal growth during the patterning process. To demonstrate the feasibility of the 10 µm-scale micro-pattern array for the micro-perovskite LEDs (micro-PeLEDs), CsPbBr_xI_3-x–multi-ligand–PEO precursors were adopted. These micro-PeLEDs exhibited characteristic emission at 650.9 nm with a luminance of 688.4 cd m⁻² and external quantum efficiency of 5.9% at 4 V.

用于制造用于超高清 (UHD) 显示器的微型发光二极管 (LED) 像素阵列的传统技术具有成本高和加工复杂的缺点。此外，使用传统的图案化和沉积工艺在技术上难以提高显示分辨率。随着芯片尺寸减小到微尺度，由于额外的转移过程，以及重复转移过程中机械定位的不准确，成本增加。为了解决这些问题，引入了一种使用毛细管力光刻的微图案化方法。使用这种方法，制造了一个 10 µm 尺度的 CsPbBr _x I _3-x微图案阵列。此外，多配体（NMABr _0.7 I _0.3将-DMPDAB-PDAB）和聚（环氧乙烷）（PEO）作为亲水性聚合物添加到钙钛矿前体中，以控制图案化过程中的异质成核和晶体生长。为了证明微钙钛矿 LED（micro-PeLEDs）的 10 µm 级微图案阵列的可行性，采用了 CsPbBr _x I _3-x -multi-ligand-PEO 前驱体。这些 micro-PeLED 在 650.9 nm 处表现出特征发射，在 4 V 时具有 688.4 cd m ^-2的亮度和 5.9% 的外部量子效率。