We present an easy but effective method to extract the four parameters of the simplified Enz–Krummenacher–Vittoz (sEKV) MOSFET model. The procedure, which is based on direct lateral optimization, is tested using measurements from experimental polycrystalline silicon Thin Film Transistors (TFTs) of various channel lengths and widths. We demonstrate that this basic MOSFET model is able to reasonably describe the saturation transfer characteristics of these polysilicon TFTs. Furthermore, we evaluate the computational adeptness for extracting the four sEKV parameters of the lateral optimization fitting procedure as compared to the more traditional vertical optimization one.

我们提出了一种简单但有效的方法来提取简化的 Enz-Krummenacher-Vittoz (sEKV) MOSFET 模型的四个参数。该过程基于直接横向优化，使用来自各种通道长度和宽度的实验多晶硅薄膜晶体管 (TFT) 的测量值进行测试。我们证明了这个基本的 MOSFET 模型能够合理地描述这些多晶硅 TFT 的饱和传输特性。此外，与更传统的垂直优化相比，我们评估了提取横向优化拟合过程的四个 sEKV 参数的计算能力。