This paper presents a low-power self-contained overvoltage detector. Compared with conventional detectors that consist of stacked Zener diodes, the proposed structure can trim the threshold with binary codes to accommodate system-level changes. The proposed structure enables trimming by adding a decoder, a biasing circuit, and switches in parallel with Zener diodes. The newly configured structure forms a standalone detector that can operate independently and be powered from the supply under detection with negligible current addition. The proposed structure is applicable to any high-voltage process that contains N-type isolation layer and needs no high-voltage device. The proposed circuit with three bits adjustment circuit was fabricated in a 0.18 μm Bipolar-CMOS-DMOS (BCD) process, the overvoltage threshold can be adjusted from 8 to 38 V with post trim variation of ±2.5 V. The measured quiescent current was around 0 μA at 10 V and 28 μA at 38 V, which was comparable to the current consumption in a conventional structure with 38 V overvoltage threshold. © 2022 Institute of Electrical Engineers of Japan. Published by Wiley Periodicals LLC.

中文翻译：

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一种独立的可微调低静态电流过压检测器

本文提出了一种低功耗自包含过电压检测器。与由堆叠齐纳二极管组成的传统探测器相比，所提出的结构可以用二进制代码修整阈值以适应系统级的变化。所提出的结构通过添加解码器、偏置电路和与齐纳二极管并联的开关来实现微调。新配置的结构形成了一个独立的检测器，可以独立运行并由被检测的电源供电，电流增加可忽略不计。所提出的结构适用于任何包含N型隔离层且不需要高压器件的高压工艺。所提出的具有三位调整电路的电路采用 0.18 μm 双极-CMOS-DMOS (BCD) 工艺制造，过压阈值可在 8 V 至 38 V 范围内调整，调整后变化为 ±2.5 V。测得的静态电流在 10 V 时约为 0 μA，在 38 V 时为 28 μA，这与传统结构中的电流消耗相当38 V 过压阈值。© 2022 日本电气工程师学会。由 Wiley Periodicals LLC 出版。