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A photonic integrated circuit–based erbium-doped amplifier
Science ( IF 44.7 ) Pub Date : 2022-06-16 , DOI: 10.1126/science.abo2631
Yang Liu 1, 2 , Zheru Qiu 1, 2 , Xinru Ji 1, 2 , Anton Lukashchuk 1, 2 , Jijun He 1, 2 , Johann Riemensberger 1, 2 , Martin Hafermann 3 , Rui Ning Wang 1, 2 , Junqiu Liu 1, 2 , Carsten Ronning 3 , Tobias J Kippenberg 1, 2
Affiliation  

Erbium-doped fiber amplifiers revolutionized long-haul optical communications and laser technology. Erbium ions could provide a basis for efficient optical amplification in photonic integrated circuits but their use remains impractical as a result of insufficient output power. We demonstrate a photonic integrated circuit–based erbium amplifier reaching 145 milliwatts of output power and more than 30 decibels of small-signal gain—on par with commercial fiber amplifiers and surpassing state-of-the-art III-V heterogeneously integrated semiconductor amplifiers. We apply ion implantation to ultralow–loss silicon nitride (Si 3 N 4 ) photonic integrated circuits, which are able to increase the soliton microcomb output power by 100 times, achieving power requirements for low-noise photonic microwave generation and wavelength-division multiplexing optical communications. Endowing Si 3 N 4 photonic integrated circuits with gain enables the miniaturization of various fiber-based devices such as high–pulse-energy femtosecond mode-locked lasers.

中文翻译:

基于光子集成电路的掺铒放大器

掺铒光纤放大器彻底改变了长距离光通信和激光技术。铒离子可以为光子集成电路中的有效光放大提供基础,但由于输出功率不足,它们的使用仍然不切实际。我们展示了一种基于光子集成电路的铒放大器,其输出功率达到 145 毫瓦,小信号增益超过 30 分贝,与商用光纤放大器相当,并超越了最先进的 III-V 异质集成半导体放大器。我们将离子注入应用于超低损耗氮化硅(Si3ñ4)光子集成电路,能够将孤子微梳输出功率提高100倍,实现低噪声光子微波产生和波分复用光通信的功率要求。赋予硅3ñ4具有增益的光子集成电路能够实现各种基于光纤的设备的小型化,例如高脉冲能量飞秒锁模激光器。
更新日期:2022-06-16
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