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Sequential Growth of Vertical Transition-Metal Dichalcogenide Heterostructures on Rollable Aluminum Foil
ACS Nano ( IF 15.8 ) Pub Date : 2022-06-17 , DOI: 10.1021/acsnano.1c10233 Joseph Kojo Baidoo 1, 2 , Soo Ho Choi 1 , Frederick Osei-Tutu Agyapong-Fordjour 2 , Stephen Boandoh 1 , Seok Joon Yun 1 , Laud Anim Adofo 2 , Andrew Ben-Smith 2 , Yong In Kim 2 , Jeong Won Jin 2 , Min-Hyoung Jung 2 , Hu Young Jeong 3 , Young-Min Kim 1, 2 , Young Hee Lee 1, 2 , Soo Min Kim 4 , Ki Kang Kim 1, 2
ACS Nano ( IF 15.8 ) Pub Date : 2022-06-17 , DOI: 10.1021/acsnano.1c10233 Joseph Kojo Baidoo 1, 2 , Soo Ho Choi 1 , Frederick Osei-Tutu Agyapong-Fordjour 2 , Stephen Boandoh 1 , Seok Joon Yun 1 , Laud Anim Adofo 2 , Andrew Ben-Smith 2 , Yong In Kim 2 , Jeong Won Jin 2 , Min-Hyoung Jung 2 , Hu Young Jeong 3 , Young-Min Kim 1, 2 , Young Hee Lee 1, 2 , Soo Min Kim 4 , Ki Kang Kim 1, 2
Affiliation
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Vertical van der Waals heterostructures (vdWhs), which are made by layer-by-layer stacking of two-dimensional (2D) materials, offer great opportunities for the development of extraordinary physics and devices such as topological superconductivity, robust quantum Hall phenomenon, electron–hole pair condensation, Coulomb drag, and tunneling devices. However, the size of vdWhs is still limited to the order of a few micrometers, which restricts the large-scale roll-to-roll processes for industrial applications. Herein, we report the sequential growth of a 14 in. vertical vdWhs on a rollable Al foil via chemical vapor deposition. By supplying chalcogen precursors to liquid transition-metal precursor-coated Al foils, we grew a wide range of individual 2D transition-metal dichalcogenide (TMD) films, including MoS2, VS2, ReS2, WS2, SnS2, WSe2, and vanadium-doped MoS2. Additionally, by repeating the growth process, we successfully achieved the layer-by-layer growth of ReS2/MoS2 and SnS2/ReS2/MoS2 vdWhs. The chemically inert Al native oxide layer inhibits the diffusion of chalcogen and metal atoms into Al foils, allowing for the growth of diverse TMDs and their vdWhs. The conductive Al substrate enables the effective use of vdWhs/Al as a hydrogen evolution reaction electrocatalyst with a transfer-free process. This work provides a robust route for the commercialization of 2D TMDs and their vdWhs at a low cost.
中文翻译：
垂直过渡金属二硫化物异质结构在可卷曲铝箔上的连续生长
通过逐层堆叠二维 (2D) 材料制成的垂直范德华异质结构 (vdWhs) 为拓扑超导性、鲁棒量子霍尔现象、电子等非凡物理和器件的发展提供了巨大机遇–空穴对凝结、库仑阻力和隧道装置。然而，vdWhs的尺寸仍然局限于几微米量级，这限制了工业应用的大规模卷对卷工艺。在此，我们报告了通过化学气相沉积在可卷曲铝箔上连续生长 14 英寸垂直 vdWhs。通过为液态过渡金属前体涂层铝箔提供硫属元素前体，我们生长出范围广泛的单个二维过渡金属二硫化物 (TMD) 薄膜，包括 MoS 2、VS 2、ReS 2、WS 2、SnS 2、WSe 2和掺钒MoS 2。此外，通过重复生长过程，我们成功实现了ReS 2 /MoS 2和SnS 2 /ReS 2 /MoS 2的逐层生长vdWhs。化学惰性的铝原生氧化物层可抑制硫属元素和金属原子扩散到铝箔中，从而允许各种 TMD 及其 vdWh 的生长。导电铝基板能够有效地使用 vdWhs/Al 作为析氢反应电催化剂，具有无转移过程。这项工作为 2D TMD 及其 vdWhs 的低成本商业化提供了一条稳健的途径。
更新日期：2022-06-17
中文翻译：
垂直过渡金属二硫化物异质结构在可卷曲铝箔上的连续生长
通过逐层堆叠二维 (2D) 材料制成的垂直范德华异质结构 (vdWhs) 为拓扑超导性、鲁棒量子霍尔现象、电子等非凡物理和器件的发展提供了巨大机遇–空穴对凝结、库仑阻力和隧道装置。然而，vdWhs的尺寸仍然局限于几微米量级，这限制了工业应用的大规模卷对卷工艺。在此，我们报告了通过化学气相沉积在可卷曲铝箔上连续生长 14 英寸垂直 vdWhs。通过为液态过渡金属前体涂层铝箔提供硫属元素前体，我们生长出范围广泛的单个二维过渡金属二硫化物 (TMD) 薄膜，包括 MoS 2、VS 2、ReS 2、WS 2、SnS 2、WSe 2和掺钒MoS 2。此外，通过重复生长过程，我们成功实现了ReS 2 /MoS 2和SnS 2 /ReS 2 /MoS 2的逐层生长vdWhs。化学惰性的铝原生氧化物层可抑制硫属元素和金属原子扩散到铝箔中，从而允许各种 TMD 及其 vdWh 的生长。导电铝基板能够有效地使用 vdWhs/Al 作为析氢反应电催化剂，具有无转移过程。这项工作为 2D TMD 及其 vdWhs 的低成本商业化提供了一条稳健的途径。
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