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Generating and Capturing Secondary Hot Carriers in Monolayer Tungsten Dichalcogenides
The Journal of Physical Chemistry Letters ( IF 4.8 ) Pub Date : 2022-06-17 , DOI: 10.1021/acs.jpclett.2c01073
Pan Adhikari 1 , Peijian Wang 2 , Kanishka Kobbekaduwa 1 , Chendi Xie 1 , Chang Huai 2 , Yinghui Wang 3 , Jianbing Zhang 4 , Ying Shi 5 , Haimei Zheng 6 , Apparao M Rao 1 , Hao Zeng 2 , Jianbo Gao 1
Affiliation  

It remains challenging to capture and investigate the drift dynamics of primary hot carriers because of their ultrashort lifetime (∼200 fs). Here we report a new mechanism for secondary hot carrier (∼25 ps) generation in monolayer transition metal dichalcogenides such as WS2 and WSe2, triggered by the Auger recombination of trions and biexcitons. Using ultrafast photocurrent spectroscopy, we measured and characterized the photocurrent stemming from the Auger recombination of trions and biexcitons in WS2 and WSe2. A mobility of 0.24 cm2 V–1 s–1 and a drift length of ∼3.8 nm were found for the secondary hot carriers in WS2. By leveraging interactions between exciton complexes, we envision a new mechanism for generating and controlling hot carriers, which could lead to efficient devices in photophysics, photochemistry, and photosynthesis.

中文翻译:

在单层钨二硫属化物中产生和捕获二次热载体

由于其超短寿命(~200 fs),捕获和研究初级热载流子的漂移动力学仍然具有挑战性。在这里,我们报告了一种在单层过渡金属二硫化物(如 WS 2和 WSe 2 )中产生二次热载流子(~25 ps)的新机制,由三离子和双激子的俄歇复合触发。使用超快光电流光谱,我们测量并表征了源自 WS 2和 WSe 2中的三离子和双激子的俄歇复合的光电流。WS 中的二次热载流子的迁移率为 0.24 cm 2 V –1 s –1,漂移长度约为 3.8 nm2 . 通过利用激子复合物之间的相互作用,我们设想了一种产生和控制热载流子的新机制,这可能会导致光物理学、光化学和光合作用中的高效设备。
更新日期:2022-06-17
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