Deep-ultraviolet (DUV) phototransistors have shown great potential applications in UV imaging, artificial intelligence, and wearable optoelectronics. Among a large number of wide bandgap semiconductors, the quasi-two-dimensional β-Ga₂O₃ is considered as an ideal candidate for DUV photodetector applications. Herein, we report a high responsivity (R) and fully flexible Ta-doped β-Ga₂O₃ DUV phototransistor which exhibits outstanding optoelectrical properties with a high R of 1.32 × 10⁶ A/W, a large detectivity of 5.68 × 10¹⁴ Jones, a great photo-to-dark current ratio of 1.10 × 10¹⁰%, a high external quantum efficiency of 6.60 × 10⁸%, and an ultra-fast response time of ~3.50 ms. Besides, the flexible Ta-doped β-Ga₂O₃ device also displays high reliability and mechanical flexibility that can sustain well after over 1 × 10⁴ bending cycles. Moreover, high-contrast imaging of UV light was obtained on the flexible DUV detector arrays, which can be efficiently trained and recognized by an artificial neural network. Our findings offer a perspective to develop wearable optoelectronics and UV imaging based on high-performance flexible β-Ga₂O₃ DUV phototransistors, providing an inspiration for the future work in artificial intelligence and bionic robot fields.

深紫外（DUV）光电晶体管在紫外成像、人工智能和可穿戴光电子学中显示出巨大的潜在应用。在大量的宽带隙半导体中，准二维β - Ga ₂ O ₃被认为是DUV光电探测器应用的理想候选者。在此，我们报道了一种高响应度 ( R ) 和完全柔性的 Ta 掺杂β -Ga ₂ O ₃ DUV 光电晶体管，它表现出出色的光电性能，具有1.32 × 10 ^{6 A/W 的高}R 和 5.68 × 10 ¹⁴的大检测率Jones，1.10 × 10 的出色光暗电流比^{10 %，6.60 × 10 8} %的高外部量子效率和约3.50 ms 的超快响应时间。此外，柔性 Ta 掺杂β -Ga ₂ O _{3器件还显示出高可靠性和机械柔韧性，在超过 1 × 10} ⁴次弯曲循环后仍能保持良好状态。此外，在柔性深紫外探测器阵列上获得了紫外光的高对比度成像，可以通过人工神经网络进行有效训练和识别。我们的研究结果为开发基于高性能柔性β -Ga ₂ O _{3的可穿戴光电和紫外成像提供了一个视角}DUV光电晶体管，为未来在人工智能和仿生机器人领域的工作提供灵感。