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High-Efficiency Solar Cells Grown on Spalled Germanium for Substrate Reuse without Polishing
Advanced Energy Materials ( IF 24.4 ) Pub Date : 2022-06-16 , DOI: 10.1002/aenm.202201332 John S. Mangum 1 , Anthony D. Rice 1 , Jie Chen 2 , Jason Chenenko 2 , Evan W. K. Wong 1 , Anna K. Braun 2 , Steve Johnston 1 , Harvey Guthrey 1 , John F. Geisz 1 , Aaron J. Ptak 1 , Corinne E. Packard 1, 2
Advanced Energy Materials ( IF 24.4 ) Pub Date : 2022-06-16 , DOI: 10.1002/aenm.202201332 John S. Mangum 1 , Anthony D. Rice 1 , Jie Chen 2 , Jason Chenenko 2 , Evan W. K. Wong 1 , Anna K. Braun 2 , Steve Johnston 1 , Harvey Guthrey 1 , John F. Geisz 1 , Aaron J. Ptak 1 , Corinne E. Packard 1, 2
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Radical reduction of III–V device costs requires a multifaceted approach attacking both growth and substrate costs. Implementing device removal and substrate reuse provides an opportunity for substrate cost reduction. Controlled spalling allows removal of thin devices from the expensive substrate; however, the fracture-based process currently generates surfaces with significant morphological changes compared to polished wafers. 49 single junction devices are fabricated across the spalled surface of full 50 mm germanium wafers without chemo-mechanical polishing before epitaxial growth. Device defects are identified and related to morphological spalling defects—arrest lines, gull wings, and river lines—and their impact on cell performance using physical and functional characterization techniques. River line defects have the most consistent and detrimental effect on cell performance. Devices achieve a single junction efficiency above 23% and open-circuit voltage of 1.01 V, demonstrating that spalled germanium does not need to be returned to a pristine, polished state to achieve high-quality device performance.
中文翻译：
在剥落的锗上生长的高效太阳能电池无需抛光即可重复使用基板
大幅降低 III-V 器件成本需要多方面的方法来解决生长和衬底成本。实施器件移除和基板再利用为降低基板成本提供了机会。受控剥落允许从昂贵的基板上移除薄器件；然而，与抛光晶圆相比，基于断裂的工艺目前会产生具有显着形态变化的表面。整个 50 毫米锗晶片的剥落表面上制造了 49 个单结器件，在外延生长之前没有进行化学机械抛光。使用物理和功能表征技术识别器件缺陷并将其与形态剥落缺陷相关联——拦阻线、鸥翼和河流线——以及它们对电池性能的影响。河道缺陷对电池性能具有最一致和最有害的影响。器件实现了超过 23% 的单结效率和 1.01 V 的开路电压，这表明剥落的锗不需要恢复到原始的抛光状态即可实现高质量的器件性能。
更新日期：2022-06-16
中文翻译：
在剥落的锗上生长的高效太阳能电池无需抛光即可重复使用基板
大幅降低 III-V 器件成本需要多方面的方法来解决生长和衬底成本。实施器件移除和基板再利用为降低基板成本提供了机会。受控剥落允许从昂贵的基板上移除薄器件；然而，与抛光晶圆相比，基于断裂的工艺目前会产生具有显着形态变化的表面。整个 50 毫米锗晶片的剥落表面上制造了 49 个单结器件，在外延生长之前没有进行化学机械抛光。使用物理和功能表征技术识别器件缺陷并将其与形态剥落缺陷相关联——拦阻线、鸥翼和河流线——以及它们对电池性能的影响。河道缺陷对电池性能具有最一致和最有害的影响。器件实现了超过 23% 的单结效率和 1.01 V 的开路电压，这表明剥落的锗不需要恢复到原始的抛光状态即可实现高质量的器件性能。
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