Imagers that operate in the near-infrared region (wavelengths of 0.7–1.4 µm) are of use in applications such as material sorting, machine vision and autonomous driving. However, such imagers typically use the flip-chip method to connect infrared photodiodes with silicon-based readout integrated circuits, as the need for high-temperature processing and single-crystalline substrates prevents direct integration. This increases processing complexity and cost. Here we report high-resolution imagers that monolithically integrate near-infrared colloidal quantum dot photodiodes with complementary metal–oxide–semiconductor readout integrated circuits. The colloidal quantum dot photodetector is designed with a structure compatible with complementary metal–oxide–semiconductors and exhibits a spectral range of 400–1,300 nm, room-temperature detectivity of 2.1 × 10¹² Jones, −3 dB bandwidth of 140 kHz and linear dynamic range of over 100 dB. With this approach, we create a large (640 × 512 pixels) imager that exhibits a spatial resolution of 40 line pairs per millimetre at a modulation transfer function of 50%, and we show that it can be used for vein imaging and matter identification.

在近红外区域（波长为 0.7–1.4 µm）工作的成像仪可用于材料分拣、机器视觉和自动驾驶等应用。然而，此类成像器通常使用倒装芯片方法将红外光电二极管与基于硅的读出集成电路连接起来，因为对高温处理和单晶基板的需求阻碍了直接集成。这增加了处理复杂性和成本。在这里，我们报告了将近红外胶体量子点光电二极管与互补金属氧化物半导体读出集成电路单片集成的高分辨率成像器。胶体量子点光电探测器采用与互补金属氧化物半导体兼容的结构设计，光谱范围为 400-1,300 nm，室温探测率为 2。¹² 琼斯，-3 dB 带宽 140 kHz 和超过 100 dB 的线性动态范围。通过这种方法，我们创建了一个大型（640 × 512 像素）成像器，其空间分辨率为每毫米 40 线对，调制传递函数为 50%，我们证明它可用于静脉成像和物质识别。