Strong Interfacial Charge Trapping in Ultrathin SrRuO3 on SrTiO3 Probed by Noise Spectroscopy,The Journal of Physical Chemistry Letters

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Strong Interfacial Charge Trapping in Ultrathin SrRuO3 on SrTiO3 Probed by Noise Spectroscopy
The Journal of Physical Chemistry Letters ( IF 4.8 ) Pub Date : 2022-06-15 , DOI: 10.1021/acs.jpclett.2c01163
Jung-Woo Lee ₁ , Jiyeong Kim ₂ , Kitae Eom ₃ , Jaeyoung Jeon _{2,

4} , Young Chul Kim _{2,

4} , Hwan Sik Kim _{2,

4} , Yeong Hwan Ahn _{2,

4} , Sungkyu Kim ₅ , Chang-Beom Eom ₃ , Hyungwoo Lee _{2,

4}

Affiliation

SrRuO₃ (SRO) has emerged as a promising quantum material due to its exotic electron correlations and topological properties. In epitaxial SRO films, electron scattering against lattice phonons or defects has been considered as only a predominant mechanism accounting for electronic properties. Although the charge trapping by polar defects can also strongly influence the electronic behavior, it has often been neglected. Herein, we report strong interfacial charge trapping in ultrathin SRO films on SrTiO₃ (STO) substrates probed by noise spectroscopy. We find that oxygen vacancies in the STO cause stochastic interfacial charge trapping, resulting in high electrical noise. Spectral analyses of the photoinduced noise prove that the oxygen vacancies buried deep in the STO can effectively contribute to the charge trapping process. These results unambiguously reveal that electron transport in ultrathin SRO films is dominated by the carrier number fluctuation that correlates with interfacial charge trapping.

中文翻译：

噪声光谱法探测 SrTiO3 上超薄 SrRuO3 的强界面电荷俘获

SrRuO ₃ (SRO) 因其奇异的电子相关性和拓扑特性而成为一种很有前途的量子材料。在外延 SRO 薄膜中，电子对晶格声子或缺陷的散射被认为是解释电子特性的唯一主要机制。尽管极性缺陷引起的电荷俘获也会强烈影响电子行为，但它经常被忽视。在此，我们报道了 SrTiO _{3上超薄 SRO 薄膜中的强界面电荷俘获}(STO) 通过噪声光谱探测的底物。我们发现 STO 中的氧空位会导致随机的界面电荷俘获，从而导致高电噪声。光致噪声的光谱分析证明，深埋在 STO 中的氧空位可以有效地促进电荷俘获过程。这些结果明确地表明，超薄 SRO 薄膜中的电子传输主要受与界面电荷俘获相关的载流子数波动的支配。

更新日期：2022-06-15

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