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Carbon Nitride with Rationally Designed π-Conjugated Structure for Bright Blue-Violet Light-Emitting Diodes
Small ( IF 13.0 ) Pub Date : 2022-06-15 , DOI: 10.1002/smll.202202969 Xingchen He 1 , Lingqiang Meng 1 , Yanliang Liu 2 , Xue Zhang 1 , Ziqiang Cheng 1 , Hao Huang 1 , Rui He 1 , Hao Pan 1 , Yihong Kang 1, 3 , Jia Li 1 , Yiqing Wang 4 , Paul K Chu 5 , Baomin Xu 2 , Jiahong Wang 1 , Xue-Feng Yu 1
Small ( IF 13.0 ) Pub Date : 2022-06-15 , DOI: 10.1002/smll.202202969 Xingchen He 1 , Lingqiang Meng 1 , Yanliang Liu 2 , Xue Zhang 1 , Ziqiang Cheng 1 , Hao Huang 1 , Rui He 1 , Hao Pan 1 , Yihong Kang 1, 3 , Jia Li 1 , Yiqing Wang 4 , Paul K Chu 5 , Baomin Xu 2 , Jiahong Wang 1 , Xue-Feng Yu 1
Affiliation
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Carbon nitride consisting of the broken π-conjugated structure (bc-CN) is designed as the emitting layer in a blue-violet light emitting diode (LED). The bc-CN is prepared by a metal-oxide (MgO) template-assisted method, in which the low reaction temperature and nano MgO jointly control the degree of polymerization to form cyano groups and broken π-conjugation in the bc-CN nanosheets (bc-CN NS) which emit intense blue-violet photoluminescence at 412 nm. The broken π-conjugated heptazine-ring structure in the bc-CN NS mitigates non-radiation energy loss and promotes the d*–LP transition. As a result, a high quantum efficiency of 73.1% is achieved. The excellent dispersing ability of the bc-CN NS enables solution-based fabrication of the light emitting diode (LED). The LED exhibits intense electroluminescence of 236 cd m−2 at 412 nm with an external quantum efficiency of 0.46%. The broken π-conjugation modulates the optical properties of the polymerized carbon nitride semiconductor giving rise to intense blue-violet electroluminescence, which is very desirable for printable and wide-color-gamut display devices.
中文翻译：
具有合理设计的 π 共轭结构的氮化碳用于明亮的蓝紫色发光二极管
由断裂的 π 共轭结构 (bc-CN) 组成的氮化碳被设计为蓝紫色发光二极管 (LED) 中的发光层。bc-CN是通过金属氧化物（MgO）模板辅助法制备的，其中低反应温度和纳米MgO共同控制聚合度在bc-CN纳米片中形成氰基并破坏π共轭（ bc-CN NS) 在 412 nm 处发出强烈的蓝紫色光致发光。bc-CN NS中断裂的π-共轭庚嗪环结构减轻了非辐射能量损失并促进了d*–LP 转换。结果，实现了 73.1% 的高量子效率。bc-CN NS 的优异分散能力使基于溶液的发光二极管 (LED) 制造成为可能。LED 在 412 nm 处表现出 236 cd m -2的强电致发光，外量子效率为 0.46%。断裂的 π 共轭调节聚合氮化碳半导体的光学特性，产生强烈的蓝紫色电致发光，这对于可印刷和宽色域显示设备来说是非常理想的。
更新日期：2022-06-15
中文翻译：
具有合理设计的 π 共轭结构的氮化碳用于明亮的蓝紫色发光二极管
由断裂的 π 共轭结构 (bc-CN) 组成的氮化碳被设计为蓝紫色发光二极管 (LED) 中的发光层。bc-CN是通过金属氧化物（MgO）模板辅助法制备的，其中低反应温度和纳米MgO共同控制聚合度在bc-CN纳米片中形成氰基并破坏π共轭（ bc-CN NS) 在 412 nm 处发出强烈的蓝紫色光致发光。bc-CN NS中断裂的π-共轭庚嗪环结构减轻了非辐射能量损失并促进了d*–LP 转换。结果，实现了 73.1% 的高量子效率。bc-CN NS 的优异分散能力使基于溶液的发光二极管 (LED) 制造成为可能。LED 在 412 nm 处表现出 236 cd m -2的强电致发光，外量子效率为 0.46%。断裂的 π 共轭调节聚合氮化碳半导体的光学特性，产生强烈的蓝紫色电致发光，这对于可印刷和宽色域显示设备来说是非常理想的。
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