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Second-harmonic generation tuning by stretching arrays of GaAs nanowires
Nanoscale ( IF 5.8 ) Pub Date : 2022-06-13 , DOI: 10.1039/d2nr00641c Grégoire Saerens 1 , Esther Bloch 1 , Kristina Frizyuk 2 , Olga Sergaeva 2 , Viola V Vogler-Neuling 1 , Elizaveta Semenova 3, 4 , Elizaveta Lebedkina 3 , Mihail Petrov 2 , Rachel Grange 1 , Maria Timofeeva 1
Nanoscale ( IF 5.8 ) Pub Date : 2022-06-13 , DOI: 10.1039/d2nr00641c Grégoire Saerens 1 , Esther Bloch 1 , Kristina Frizyuk 2 , Olga Sergaeva 2 , Viola V Vogler-Neuling 1 , Elizaveta Semenova 3, 4 , Elizaveta Lebedkina 3 , Mihail Petrov 2 , Rachel Grange 1 , Maria Timofeeva 1
Affiliation
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We present a wearable device with III–V nanowires in a flexible polymer, which is used for active mechanical tuning of the second-harmonic generation intensity. An array of vertical GaAs nanowires was grown with metalorganic vapour-phase epitaxy, then embedded in polydimethylsiloxane and detached from the rigid substrate with mechanical peel off. Experimental results show a tunability of the second-harmonic generation intensity by a factor of two for 30% stretching which matches the simulations including the distribution of sizes. We studied the impact of different parameters on the band dispersion and tunability of the second-harmonic generation, such as the pitch, the length, and the diameter. We predict at least three orders of magnitude active mechanical tuning of the nonlinear signal intensity for nanowire arrays. The flexibility of the array together with the resonant wavelength engineering make such structures perspective platforms for future bendable or stretchable nanophotonic devices as light sources or sensors.
中文翻译：
通过拉伸 GaAs 纳米线阵列进行二次谐波产生调谐
我们提出了一种在柔性聚合物中具有 III-V 纳米线的可穿戴设备，用于对二次谐波产生强度进行主动机械调谐。垂直 GaAs 纳米线阵列通过金属有机气相外延生长，然后嵌入聚二甲基硅氧烷中，并通过机械剥离从刚性基板上分离。实验结果表明，对于 30% 的拉伸，二次谐波产生强度的可调性为两倍，这与包括尺寸分布在内的模拟相匹配。我们研究了不同参数对二次谐波产生的能带色散和可调谐性的影响，例如节距、长度和直径。我们预测纳米线阵列的非线性信号强度至少有三个数量级的主动机械调谐。
更新日期：2022-06-14
中文翻译：
通过拉伸 GaAs 纳米线阵列进行二次谐波产生调谐
我们提出了一种在柔性聚合物中具有 III-V 纳米线的可穿戴设备，用于对二次谐波产生强度进行主动机械调谐。垂直 GaAs 纳米线阵列通过金属有机气相外延生长，然后嵌入聚二甲基硅氧烷中，并通过机械剥离从刚性基板上分离。实验结果表明，对于 30% 的拉伸，二次谐波产生强度的可调性为两倍，这与包括尺寸分布在内的模拟相匹配。我们研究了不同参数对二次谐波产生的能带色散和可调谐性的影响，例如节距、长度和直径。我们预测纳米线阵列的非线性信号强度至少有三个数量级的主动机械调谐。
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