Current trends in data processing have given impetus for an intense search of new concepts of memory devices with emphasis on efficiency, speed, and scalability. A promising new approach to memory storage is based on resistance switching between charge-ordered domain states in the layered dichalcogenide 1T-TaS₂. Here we investigate the energy efficiency scaling of such charge configuration memory (CCM) devices as a function of device size and data write time τ_W as well as other parameters that have bearing on efficient device operation. We find that switching energy efficiency scales approximately linearly with both quantities over multiple decades, departing from linearity only when τ_W approaches the ∼0.5 ps intrinsic switching limit. Compared to current state of the art memory devices, CCM devices are found to be much faster and significantly more energy efficient, demonstrated here with two-terminal switching using 2.2 fJ, 16 ps electrical pulses.

中文翻译：

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充电配置存储器件：能源效率和开关速度

当前数据处理的趋势推动了对存储设备新概念的深入研究，重点是效率、速度和可扩展性。_{一种有前途的存储器存储新方法是基于层状二硫属化物 1T- TaS2}中电荷有序域状态之间的电阻切换。在这里，我们研究了此类电荷配置存储器 (CCM) 器件的能效缩放，作为器件尺寸和数据写入时间 τ _W以及影响器件高效运行的其他参数的函数。我们发现，开关能效在几十年内与这两个量近似呈线性关系，仅当 τ _W接近~0.5 ps 固有开关极限时才偏离线性。与当前最先进的存储器件相比，CCM 器件速度更快且能效显着更高，此处通过使用 2.2 fJ、16 ps 电脉冲的两端开关进行了演示。