Abstract—

Using an X-ray plate as a two-dimensional position-sensitive detector, the angular distributions of parametric X-ray radiation of electrons with an energy of 255 MeV in a thin silicon crystal are measured in the asymmetric Laue geometry for the reflection planes (111) and \((\bar {1}\bar {1}1).\) The ratio of the measured radiation intensities for these reflection planes is in good agreement with calculations within the framework of the kinematic theory of parametric X-ray radiation if the contribution of the diffraction of photons excited by mechanisms of bremsstrahlung and transition radiation and the influence of the effect of reflection asymmetry on this process are taken into account.

中文翻译：

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反射不对称对晶体中电子参量 X 射线辐射输出的影响

摘要——

使用X射线板作为二维位置敏感探测器，在反射平面的不对称劳厄几何中测量了薄硅晶体中能量为255 MeV的电子参量X射线辐射的角分布（ 111) 和\((\bar {1}\bar {1}1)​​.\)这些反射平面的测量辐射强度之比与参量 X 射线运动学理论框架内的计算非常吻合如果考虑轫致辐射和跃迁辐射机制激发的光子衍射的贡献以及反射不对称性对该过程的影响，则辐射。