In resistive switching memories or artificial synaptic devices, halide perovskites have attracted attention for their unusual features such as rapid ion migration, adjustable composition, and facile synthesis. Herein, the environmentally friendly and highly air stable CsCu₂I₃ perovskite films are used as the active layer in the Au/CsCu₂I₃/ITO/glass artificial synapses. The device shows variable synaptic plasticities such as long-term and short-term synaptic plasticity, paired-pulse facilitation, and spike-timing-dependent plasticity by combining potentiation and depression along the formation of conductive filaments. The performances of the devices are maintained for 160 days under ambient conditions. Additionally, the accuracy evaluation of the CsCu₂I₃-based artificial synapses performs exceptionally well with the MNIST and Fashion MNIST data sets, demonstrating high learning accuracy in deep neural networks. Using the novel B-site engineered halide perovskite material with extreme air stability, this study paves the way for artificial synaptic devices for next-generation in-memory hardware.

中文翻译：

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用于神经计算的环境稳定的所有无机 CsCu2I3 人工突触

在阻变存储器或人工突触装置中，卤化物钙钛矿因其离子迁移速度快、成分可调节、合成简便等不同寻常的特性而备受关注。在此，环境友好且高度空气稳定性的CsCu ₂ I ₃钙钛矿薄膜被用作Au/CsCu ₂ I _{3的活性层。}/ITO/玻璃人工突触。该装置通过沿着导电丝的形成结合增强和抑制，显示出可变的突触可塑性，例如长期和短期突触可塑性、成对脉冲促进和尖峰时间依赖性可塑性。这些设备的性能在环境条件下可保持 160 天。_{此外，基于 CsCu 2} I ₃的人工突触的准确度评估在 MNIST 和 Fashion MNIST 数据集上表现异常出色，证明了深度神经网络的高学习准确度。使用具有极高空气稳定性的新型 B 位工程卤化物钙钛矿材料，这项研究为下一代内存硬件的人工突触设备铺平了道路。