A discrepancy of monolithic microwave-integrated circuit (MMIC) amplifier simulations is discussed for conventional electromagnetic (EM) circuit co-simulation in advanced design system (ADS). An obvious discrepancy occurs when microstrip (MS) type transistor schematic models are used in a high gain MMIC amplifier. The coupling effect of a backside via hole in the MS-type model, which is excluded from EM layout simulation, is demonstrated to be the root of this error that will become significant in high-gain MMIC amplifier design. A new method is proposed to include a source via hole of the MS-type transistor in MMIC layout EM simulations. Simulation experiments confirm that this new method can significantly improve the EM simulation accuracy when including a transistor source via hole in the circuit layout EM simulation. The intercoupling effect of the transistor source via is investigated on the correlation with frequency, current gain, via separation distance, and substrate thickness.

中文翻译：

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采用微带型晶体管的高增益 MMIC 放大器的精确仿真


讨论了先进设计系统 (ADS) 中传统电磁 (EM) 电路协同仿真的单片微波集成电路 (MMIC) 放大器仿真的差异。当微带 (MS) 型晶体管原理图模型用于高增益 MMIC 放大器时，会出现明显的差异。 MS 型模型中背面通孔的耦合效应（被排除在 EM 布局仿真之外）被证明是该误差的根源，该误差在高增益 MMIC 放大器设计中将变得非常重要。提出了一种新方法，将 MS 型晶体管的源极过孔纳入 MMIC 版图 EM 仿真中。仿真实验证实，当在电路布局电磁仿真中包含晶体管源极过孔时，这种新方法可以显着提高电磁仿真精度。研究了晶体管源极通孔的互耦合效应与频率、电流增益、通孔间距和衬底厚度的相关性。