Near-field (NF) scan immunity is a powerful technique to identify the root-cause of failures produced during radiated immunity (RI) tests at the integrated circuit and printed circuit board (PCB) levels. However, a prediction method of the RI level from NF scan immunity results is still lacking. This type of method would help board designers to anticipate risks of RI noncompliance related to PCB directly after an NF scan campaign. This two-part article addresses this issue. In the first part, the equivalence between far-field (FF) and NF coupling on a microstrip line is discussed in order to derive an estimator of the FF induced voltage from NF scan results.

中文翻译：

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印刷电路板级近场扫描抗扰度与辐射抗扰度之间的相关性──第一部分


近场 (NF) 扫描抗扰度是一种强大的技术，可用于识别集成电路和印刷电路板 (PCB) 级辐射抗扰度 (RI) 测试期间产生的故障的根本原因。然而，仍然缺乏从 NF 扫描免疫结果预测 RI 水平的方法。这种类型的方法将帮助电路板设计人员在 NF 扫描活动之后直接预测与 PCB 相关的 RI 不合规风险。这篇由两部分组成的文章讨论了这个问题。在第一部分中，讨论了微带线上的远场 (FF) 和 NF 耦合之间的等效性，以便从 NF 扫描结果导出 FF 感应电压的估计器。