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Parasitic Effect Suppression With Resonance Cancelation for Broadband Absorber/Reflector
IEEE Antennas and Wireless Propagation Letters ( IF 4.2 ) Pub Date : 2022-05-30 , DOI: 10.1109/lawp.2022.3179022
Jianjun Jiang 1 , Sai Guo 1 , Zhanglong Mao 1 , Shimin Hu 1 , Haoran Li 1 , Zhaowang Cao 1 , Xiao Ji 1 , Ling Miao 1
Affiliation  

This letter exhibits a switchable double-sided absorber/reflector that realizes broadband performance. This structure effectively breaks the limitation of the absorption bandwidth due to the parasitic capacitance of the p-i-n diode through resonance cancelation. First, the LC parallel resonance is adapted to inhibit the interference of the parasitic capacitance by connecting the inductance in parallel with the p-i-n diode. Then, a gap capacitance is introduced to increase the resonance frequency and further expand the bandwidth. The double-sided design is applied to avoid the short-circuit phenomenon caused by the parallel connection of the inductor and the p-i-n in the single-sided design. To control the inductance value more precisely, the meander inductor is employed. Finally, the reflectivity of the proposed structure covers broadband of 3.91–9.77 GHz from reflection to below −10 dB under normal incidence by changing the working states. Furthermore, a sample of the proposed structure was manufactured and measured. The measurements are consistent with simulations.

中文翻译:

宽带吸收器/反射器的谐振消除寄生效应抑制

这封信展示了一个可切换的双面吸收器/反射器,可实现宽带性能。这种结构通过谐振消除有效地打破了pin二极管的寄生电容对吸收带宽的限制。首先,LC并联谐振用于通过将电感与pin二极管并联来抑制寄生电容的干扰。然后,引入间隙电容以增加谐振频率并进一步扩大带宽。采用双面设计,避免了单面设计中电感与管脚并联造成的短路现象。为了更精确地控制电感值,采用了曲折电感。最后,通过改变工作状态,所提出结构的反射率覆盖了从反射到低于-10 dB的3.91-9.77 GHz宽带。此外,制造并测量了所提议结构的样品。测量结果与模拟一致。
更新日期:2022-05-30
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