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Effect of Discharge Power in a Plasma during Reactive-Ion Etching of Massive Substrates on the Matching of the Lower Electrode with a High-Frequency Bias Generator
Russian Microelectronics Pub Date : 2022-06-07 , DOI: 10.1134/s1063739722030106
S. D. Poletayev

Abstract

The influence of the discharge power in plasma during the reactive-ion etching of massive substrates on the matching of the lower electrode with a high-frequency bias generator in freon-based plasma-forming gas mixtures is studied theoretically and experimentally. Theoretically, the effect of the influence of the discharge power on the active component of the plasma impedance is found. It is experimentally established that an increase in the discharge power in an SF6 medium leads to a monotonic decrease in the power reflection coefficient (up to the specified value of the etching unit) for the lower electrode with a loaded massive substrate without a special holder. It is found that the addition of argon to SF6 with a concentration of noе more than 15% leads to an additional decrease in the reflection coefficient at a lower discharge power.



中文翻译:

大面积衬底反应离子蚀刻过程中等离子体放电功率对下电极与高频偏置发生器匹配的影响

摘要

理论和实验研究了大块衬底反应离子刻蚀过程中等离子体放电功率对氟利昂基等离子体形成气体混合物中下电极与高频偏压发生器匹配的影响。理论上,发现了放电功率对等离子体阻抗有源分量的影响。实验证明,SF 6介质中放电功率的增加会导致下电极的功率反射系数单调降低(达到蚀刻单元的指定值) . 发现在SF 6中加入氩气浓度不超过 15% 会导致在较低放电功率下反射系数进一步降低。

更新日期:2022-06-08
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