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Dependence of the X-ray Sensitivity of AgGaS2 Single Crystals on Faces (001) and (100) on Dose and Hardness of Radiation
Russian Microelectronics Pub Date : 2022-06-07 , DOI: 10.1134/s1063739722030027
S. M. Asadov , S. N. Mustafaeva , D. T. Guseinov , K. I. Kelbaliev , V. F. Lukichev

Abstract

The data of X-ray diffraction characteristics of silver thiogallate (AgGaS2) single crystals grown by the Bridgman–Stockbarger (BS) method on the (001) face and chemical transport reactions (CTRs) on the (100) face are presented. The X-ray conductivity coefficient of AgGaS2 at 298 K varies within 0.97–10.63 and 0.22–3.20 min/R for samples grown by the BS and CTR methods, respectively, at an effective radiation hardness of \({{V}_{a}}\) = 25 to 50 keV and dose rate \(E\) = 0.75–78.05 R/min. The dependence of the stationary X-ray current on the X-ray dose in AgGaS2 single crystals has a power-law character.



中文翻译:

AgGaS2 单晶在面 (001) 和 (100) 上的 X 射线灵敏度对辐射剂量和硬度的依赖性

摘要

展示了通过 Bridgman-Stockbarger (BS) 方法在 (001) 面上生长的硫代没食子酸银 (AgGaS 2 ) 单晶的 X 射线衍射特性数据和在 (100) 面上的化学输运反应 (CTR) 数据。对于通过 BS 和 CTR 方法生长的样品,AgGaS 2在 298 K 时的 X 射线传导系数分别在 0.97-10.63 和 0.22-3.20 min/R 范围内变化,有效辐射硬度为\({{V}_{ a}}\) = 25 至 50 keV,剂量率\(E\) = 0.75–78.05 R/min。AgGaS 2单晶中固定X射线电流对X射线剂量的依赖性具有幂律特性。

更新日期:2022-06-08
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