Abstract

The kinetic problem of calculating the electrical conductivity and Hall constant for a thin semiconductor film is solved. The model of diffuse boundary conditions is used as the boundary conditions for the distribution function of charge carriers. The isoenergetic surface of the film material is an ellipsoid of rotation. It is assumed that scattering by the impurity atoms and dislocations of electrons (holes) is dominant in the bulk of the semiconductor. The electrical conductivity and the Hall constant of a thin film is analyzed as a function of the effective mass.

中文翻译：

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等能表面各向异性对半导体薄膜电导率和霍尔常数的影响

摘要

解决了计算半导体薄膜的电导率和霍尔常数的动力学问题。扩散边界条件模型用作电荷载流子分布函数的边界条件。薄膜材料的等能面是一个旋转椭球体。假设杂质原子的散射和电子（空穴）的位错在半导体主体中占主导地位。薄膜的电导率和霍尔常数被分析为有效质量的函数。