Fabricating Zn1−xMgxO films with a high Mg content is key to their applications in deep-ultraviolet optoelectronic devices. In this work, we report the preparation of Zn1−xMgxO films on (1210)-ZnO substrates by molecular beam epitaxy. The Zn1−xMgxO/(1210)-ZnO structure is revealed by x-ray diffraction and high-resolution transmission electron microscopy. Remarkably, no cubic MgO is observed for films with 74.6% Mg content; the film shows mainly the wurtzite structure with some intermediate phases at the interface. Photoluminescence spectra show that the film exhibits good optoelectronic properties with a bandgap of 4.6 eV. This work provides a new avenue for the fabrication of deep-ultraviolet Zn1−xMgxO films.

中文翻译：

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在 (12̄10)-ZnO 衬底上生长的 Mg 含量超过 70% 的 Zn1−xMgxO 薄膜的界面和光学性质

制备高镁含量的 Zn1−xMgxO 薄膜是其在深紫外光电器件中应用的关键。在这项工作中，我们报告了通过分子束外延在 (1210)-ZnO 衬底上制备 Zn1-xMgxO 薄膜。X射线衍射和高分辨率透射电子显微镜揭示了Zn1-xMgxO/(1210)-ZnO结构。值得注意的是，对于 74.6% Mg 含量的薄膜，没有观察到立方 MgO；该薄膜主要显示纤锌矿结构，在界面处有一些中间相。光致发光光谱表明，该薄膜具有良好的光电性能，带隙为 4.6 eV。这项工作为制备深紫外 Zn1−xMgxO 薄膜提供了新途径。