This letter presents a K{K} -/Ka-band gallium arsenide (GaAs) low-noise amplifier (LNA) for high dynamic range (DR) radar systems. The proposed LNA adopts a two-stage topology to acquire a compact chip size and low power consumption. A feedback circuit is employed in the second stage to achieve a wideband gain response. A diode-based adaptive bias circuit is designed to simultaneously improve the linearity and maintain a low drain current. In the 3-dB bandwidth from 18.7 to 36.5 GHz, the LNA achieves a maximum small-signal gain of 15.9 dB and a minimum noise figure (NF) of 1.5 dB. The measured input 1-dB compression point (IP1dB) is higher than −1 dBm, and the measured input-referred intercept point (IIP3) is higher than 3.2 dBm in the operation band. The LNA has a chip size of 1.2 mm ×0.8\times0.8 mm and the power consumption is 66 mW.

中文翻译：

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适用于雷达应用、具有 1.5”2.1-dB NF 的线性增强型 18.7”36.5-GHz LNA


这封信介绍了用于高动态范围 (DR) 雷达系统的 K{K} -/Ka 波段砷化镓 (GaAs) 低噪声放大器 (LNA)。所提出的LNA采用两级拓扑以获得紧凑的芯片尺寸和低功耗。第二级采用反馈电路来实现宽带增益响应。基于二极管的自适应偏置电路旨在同时提高线性度并保持低漏极电流。在 18.7 至 36.5 GHz 的 3 dB 带宽内，LNA 实现了 15.9 dB 的最大小信号增益和 1.5 dB 的最小噪声系数 (NF)。在工作频段内，测得的输入 1 dB 压缩点 (IP1dB) 高于 -1 dBm，测得的输入参考截点 (IIP3) 高于 3.2 dBm。 LNA的芯片尺寸为1.2mm×0.8×0.8mm，功耗为66mW。