In this letter, the modified elliptic low-pass filtering (LPF) matching network (MN) is proposed for harmonic suppression of a wideband gallium nitride (GaN) microwave monolithic integrated circuit (MMIC) power amplifier (PA) at millimeter-wave (mm-wave). To investigate the effectiveness of the method at mm-wave, a three-stage 25–31-GHz GaN MMIC PA is designed using a commercial 150-nm GaN HEMT foundry process, with a mask area of 4.5×2.64.5\times2.6 mm2. Simulated results show that the second harmonic of the PA can be effectively suppressed by using the elliptic LPF MN. Experimental results show that the realized MMIC PA achieves a saturated power-added efficiency (PAE) higher than 26.1% from 25 to 31 GHz, with a peak PAE of 31.5% at 29 GHz. The saturated gain and output power are more than 20 and 34 dBm within the band, respectively.

中文翻译：

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使用椭圆低通滤波匹配网络的三级 25'31-GHz GaN MMIC 功率放大器的谐波抑制


在这封信中，提出了改进的椭圆低通滤波（LPF）匹配网络（MN），用于毫米波（mm）宽带氮化镓（GaN）微波单片集成电路（MMIC）功率放大器（PA）的谐波抑制-海浪）。为了研究该方法在毫米波下的有效性，采用商用 150 nm GaN HEMT 代工工艺设计了三级 25–31 GHz GaN MMIC PA，掩模面积为 4.5×2.64.5\times2。 6 平方毫米。仿真结果表明，采用椭圆LPF MN可以有效抑制PA的二次谐波。实验结果表明，所实现的MMIC PA在25至31 GHz范围内的饱和功率附加效率（PAE）高于26.1%，在29 GHz时峰值PAE为31.5%。带内饱和增益和输出功率分别超过 20 和 34 dBm。