A theoretical model on the growth of nitrogen-doped nanocone-vertical graphene hybrid (N-NCN-VG) is developed. The model contains the plasma sheath equations, which are solved via boundary conditions. Using the plasma sheath equations variation of ion number density, ion energy correlated with potential distribution with distance into the plasma sheath is explored. The model is combined with the growth of N-NCN-VG, in C 2 H 2 /NH 3 plasma to examine the effect of plasma control parameters i.e., total gas pressure (250 mTorr–5 Torr) and input plasma power (300–700 W) on the kinetics of plasma species (neutrals, positive ions, and electrons) and the growth attributes like height, thickness and number density of carbon of the N-NCN-VG hybrid. In addition, the model interprets the growth of VG sheet due to defect formation on nanocone. From our theoretical investigations, it is found that as the total gas pressure increases and input plasma power decreases the height of the nanocone, graphene sheet increases along with an increase in carbon number density on the nanocone surface. In addition, the field enhancement factor of the N-NCNVG hybrid decreases with an increase in input power. The obtained results are in good agreement with the existing experimental observations.

中文翻译：

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等离子体控制参数对氮掺杂纳米锥-垂直石墨烯杂化物生长的影响：理论研究

建立了氮掺杂纳米锥-垂直石墨烯杂化物（N-NCN-VG）生长的理论模型。该模型包含通过边界条件求解的等离子体鞘层方程。使用离子数密度的等离子体鞘层方程变化，探索了与电位分布相关的离子能量与进入等离子体鞘层的距离。该模型与 N-NCN-VG 在 C 2 H 2 /NH 3 等离子体中的生长相结合，以检查等离子体控制参数的影响，即总气压 (250 mTorr–5 Torr) 和输入等离子体功率 (300– 700 W）关于等离子体物质（中性离子、正离子和电子）的动力学以及 N-NCN-VG 杂化物的碳的高度、厚度和数量密度等生长属性。此外，该模型解释了由于纳米锥上的缺陷形成而导致的 VG 片材的生长。从我们的理论研究中发现，随着总气压增加和输入等离子体功率降低纳米锥的高度，石墨烯片随着纳米锥表面上碳数密度的增加而增加。此外，N-NCNVG混合的场增强因子随着输入功率的增加而降低。所得结果与已有的实验观察结果吻合较好。