For first time a 3D simulation for infiltrated electrodes taking into account the charge transfer resistance (CT) for computing the admittance is developed. By employing a three-dimensional voxelised resistor network, we study the electrode resistance as a function of electrode microstructure and material conductivities. The simulated electrodes consist of pores, metal and ion conductor material and were generated from a random sphere insertion model which emulates the experimental procedure of the infiltration process. To both evaluate and validate the proposed model, a comparison with numerical models and experimental results from the literature is used. More accurate results closely related to those observed experimentally and the use of the main characteristics of the infiltrated electrodes as input parameters are benefits of 3D modeling. The results show that the model for the admittance and TPBL curves have the same behavior as a function of the amount of infiltrated material. This similarity is fulfilled when the diffusion of gas in the pores of the electrode is not the limiting process for the calculation of the admittance, and when the percolation of the ionic and electronic conducting phases are considered in the calculation for TPBL.

首次开发了一种考虑到用于计算导纳的电荷转移电阻 (CT) 的渗透电极的 3D 模拟。通过采用三维体素化电阻器网络，我们研究了电极电阻作为电极微观结构和材料电导率的函数。模拟电极由孔隙、金属和离子导体材料组成，由随机球插入模型生成，该模型模拟渗透过程的实验过程。为了评估和验证所提出的模型，使用了与文献中的数值模型和实验结果的比较。与实验观察到的结果密切相关的更准确结果以及使用渗透电极的主要特征作为输入参数是 3D 建模的好处。结果表明，导纳曲线模型和 TPBL 曲线具有相同的行为作为渗透材料量的函数。当气体在电极孔隙中的扩散不是导纳计算的限制过程，并且在计算 TPBL 时考虑了离子和电子导电相的渗透时，这种相似性就得到了满足。