In perovskite solar cells (PSCs), defective perovskite grain boundaries (GBs) and/or surface due to photo-excitation and the resulted suboptimal carrier dynamics at the perovskite/charge transport layer, have largely limited further performance enhancement and aggravated the PSCs instability. Fundamentally preventing the formation of these trap-states through a simple and efficient approach is thus critical to the enhancement of both device performance and stability. Herein, a novel semiconductive silicon naphthalocyanine derivative (Cl-SiNcTI) to reduce the deep level trap states at the GBs and the surface of perovskite film is successfully employed via a newly proposed photon-relaxation mechanism. The resulting benign p-type surface polarity and suppressed non-radiation recombination lead to improved charge transport in bulk perovskite and at the perovskite/spiro-OMeTAD interface. With a synergistic contribution of the Cl-SiNcTI and 2-(2-Fluorophenyl)ethylamine iodide (oFPEAI), a 24.30% efficiency is achieved in a single cell with excellent operational stability. Moreover, under steady-state light illumination, 93% power output compared to its initial state can still be maintained after 250 h of continuous operation.

中文翻译：

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通过用萘酞菁四酰亚胺减轻费米能级钉扎来调节表面极性，从而提高光稳定性的高效钙钛矿太阳能电池

在钙钛矿太阳能电池 (PSCs) 中，由于光激发导致的钙钛矿晶界 (GBs) 和/或表面缺陷以及在钙钛矿/电荷传输层导致的次优载流子动力学在很大程度上限制了进一步的性能提升并加剧了 PSCs 的不稳定性。因此，通过简单有效的方法从根本上防止这些陷阱状态的形成对于提高器件性能和稳定性至关重要。在此，通过新提出的光子弛豫机制成功地使用了一种新型半导体硅萘酞菁衍生物 (Cl-SiNcTI)，以减少 GBs 和钙钛矿薄膜表面的深能级陷阱态。由此产生的良性 p 型表面极性和抑制的非辐射复合导致块状钙钛矿和钙钛矿/螺-OMeTAD 界面处的电荷传输改善。借助 Cl-SiNcTI 和 2-(2-氟苯基)乙基胺碘化物 (oFPEAI) 的协同作用，在具有出色运行稳定性的单电池中实现了 24.30% 的效率。此外，在稳态光照条件下，连续运行250 h后仍可保持与初始状态相比93%的功率输出。