Complex permittivity measurements of irradiated high-resistivity float-zone silicon have been performed in this letter from microwave to millimeter-wave frequencies employing three different resonance techniques. It has been proven that the irradiated silicon exhibits resistivity of the intrinsic silicon at temperatures larger than 295 K and the loss tangent due to phonon absorption reaches about 10−5 at room temperature. The total loss tangent of the room-temperature irradiated silicon is smaller than 6×106\times10 −5 at frequencies larger than 5 GHz. The real part of the complex permittivity of silicon linearly increases with temperature for TT > 200 K.

中文翻译：

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用于微波和毫米波应用的辐照硅


在这封信中，采用三种不同的谐振技术，从微波到毫米波频率对辐照高电阻率浮区硅进行了复介电常数测量。已经证明，经过辐照的硅在大于295 K的温度下表现出本征硅的电阻率，并且由于声子吸收而导致的损耗角正切在室温下达到约10−5。室温辐照硅的总损耗角正切在大于5 GHz的频率下小于6×106×10 -5 。当 TT > 200 K 时，硅复介电常数的实部随温度线性增加。