In this letter, we report on the realization of a two-stage 16-way solid-state power amplifier (SSPA) in the Ka-band. To this end, we describe the design of a high-power amplifier (HPA) in a 100-nm gallium nitride (GaN) process and its integration into a split-block waveguide module. The PA module achieves an output power of more than 7.6 W between 28 and 39 GHz. In conjunction with 16 of these PA modules, we then employed a custom low-loss radial splitter and combiner to create a compact SSPA system. The two-stage SSPA configuration exhibits a small-signal gain of up to 44 dB and a peak output power of 127 W at 31 GHz in 5 dB of gain compression. Furthermore, we measured output power of close to 100 W and state-of-the-art efficiency values of more than 19% between 28 and 38 GHz. To our knowledge, this is the most broadband high-power SSPA demonstrated so far in this frequency range.

中文翻译：

---

基于 GaN 功率放大器的宽带 100W Ka 波段 SSPA


在这封信中，我们报告了 Ka 频段两级 16 路固态功率放大器 (SSPA) 的实现。为此，我们描述了 100 nm 氮化镓 (GaN) 工艺中的高功率放大器 (HPA) 的设计及其与分块波导模块的集成。 PA 模块在 28 至 39 GHz 范围内可实现超过 7.6 W 的输出功率。然后，我们结合 16 个 PA 模块，采用定制的低损耗径向分路器和组合器来创建紧凑的 SSPA 系统。两级 SSPA 配置在 31 GHz、5 dB 增益压缩下具有高达 44 dB 的小信号增益和 127 W 的峰值输出功率。此外，我们测量了接近 100 W 的输出功率以及在 28 至 38 GHz 范围内超过 19% 的最先进效率值。据我们所知，这是迄今为止在该频率范围内展示的最宽带的高功率 SSPA。