This work presents a compact, concurrent dual-band (36/64 GHz) linear power amplifier in 90 nm SiGe technology. To simultaneously overcome the gain and power limitation of conventional common-emitter (CE) silicon device at mm-wave, the stacked common-base (SCB) topology in SiGe is studied and utilized as PA cell. A highly efficient dual-band output network enables the optimum load-line matching for two widely separated frequencies. The proposed PA achieves 20/18.8 dBm PsatP_{\mathrm {sat}} , 25/22.5% PAE at 36/64 GHz supporting two concurrent 32 QAM signals (total data rate of 9 Gb/s) with 9.5/7.8 dBm linear average power respectively, and concurrent PAE of 8.9%. To the best of the authors’ knowledge, this prototype achieves highest dual frequency output power, PAE, and one of the first concurrent dual-band modulation among silicon-based mm-wave PAs, while still maintaining a highly compact footprint.

中文翻译：

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紧凑型 SiGe 堆叠式共基双频 PA，在 36/64 GHz 频率下具有 20/18.8 dBm P sat，支持并发调制


这项工作提出了一种采用 90 nm SiGe 技术的紧凑型并发双频段 (36/64 GHz) 线性功率放大器。为了同时克服毫米波下传统共发射极 (CE) 硅器件的增益和功率限制，研究了 SiGe 中的堆叠共基极 (SCB) 拓扑并将其用作 PA 单元。高效的双频段输出网络可实现两个相距较远的频率的最佳负载线匹配。所提出的 PA 在 36/64 GHz 下实现 20/18.8 dBm PsatP_{\mathrm {sat}} 和 25/22.5% PAE，支持两个并发 32 QAM 信号（总数据速率为 9 Gb/s），线性平均值为 9.5/7.8 dBm功率分别为 8.9%，并发 PAE 为 8.9%。据作者所知，该原型实现了最高的双频输出功率 PAE，并且是硅基毫米波 PA 中最早的并发双频调制之一，同时仍然保持高度紧凑的占地面积。